Recently several groups have used the reaction-diffusion R-D model with H2 diffusion in interpreting negative bias temperature Instability NBTI degradation. While the classical “H2 R-D” model can interpret long-term NBTI behavior, it is inconsistent with short-term stress data obtained by recently developed ultrafast measurements and widely used on-the-fly measurements. Moreover, experimental d...

A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility fie...

0921-4534/$ see front matter 2009 Elsevier B.V. A doi:10.1016/j.physc.2009.10.051 * Corresponding author. E-mail address: [email protected] (M. Eisterer). The influence of two important features of magnesium diboride on the macroscopic transport properties of polycrystalline MgB2 is discussed in the framework of a percolation model. While two band superconductivity does not have significant co...

We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare th...

In order to investigate the critical current of multifilamentary wires as a function of the applied field and transverse, compressive stress, a special experimental arrangement has been developed. In this arrangement, the repulsive Lorentz force generated by a set of magnets is used, to press a sample between two parallel surfaces. From the first experimental results on a multifilamentary NbTi ...

A number of recent publications explain NBTI to be due to a recoverable and a more permanent component. While a lot of information has been gathered on the recoverable component, the permanent component has been somewhat elusive. We demonstrate that oxide defects commonly linked to the recoverable component also form an important contribution to the permanent component of NBTI. As such, they ca...

The NBTI effect has become the limiting factor for the reliability of p-MOSFETs in the sub-100nm regime. In this work the dynamic NBTI degradation was systematically investigated for a 90nm p-MOSFET by experiment and simulation. For thin gate oxides stressed at low to medium gate voltages the bulk traps can be neglected and NBTI occurs mainly due to the generation of interface traps. Under this...

The main limitation to further improve the performance of ECR ion sources is set by the magnet technology related to the multipole magnet field used for the closed minimum-B structure. The JYFL ion source group has sought different approaches to improve the strength of the minimum-B structure required for the production of highly charged ion beams. It was found out that such a configuration can...