The rapid progress in semiconductor materials and devices has promoted the development of the sensors industry. Large band gap semiconductors are ideal candidates for a variety of sensor applications. In particular, gallium nitride (GaN) is used as the sensing element for the development of chemical sensors. The recognition mechanism is based on the selective interaction of anions in solution w...

GaN-based high-electron-mobility transistors (HEMTs) are very promising candidates for the next generation of high-power and high-frequency electronics. However, trapping effects have been one of the most important barriers in the development of the GaN semiconductor since its infancy. In recent years, significant research efforts have been focused on understanding and suppressing trapping effe...

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride semiconductors. In this study, single-crystalline, wurtzite Y0.07Al0.93N films were epitaxially grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The process has been investigated current density–electric field (J-E) and polarization–electric (P-E) loops as well positive-up-negative-down...

Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices (Nakamura et al. 1997; Nakamura et al. 1995; Lee, et al. 2010; Youn, et al. 2004). The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications...

Van der Waals (VDW) heterojunctions in a 2D/2D contact provide the highest area for separation and transfer of charge carriers. In this work, top-down strategy with gas erosion process was employed to fabricate carbon nitride VDW heterojunction (g-C3N4) carbon-rich nitride. The created 2D semiconducting channel structure exhibits enhanced electric field exposure radiation absorption, which faci...

Point defects in wide-bandgap semiconductors, particular hexagonal boron nitride, are promising candidates for single-photon emitters, used quantum informatics. We investigated cathodoluminescence of ion beam induced as well the effect prolonged electron irradiation on intensity luminescence. It has been shown that both band-to-band emission and defect related decreased after irradiation, durin...

Low phase noise lasers based on the combination of III–V semiconductors and silicon photonics are well established in near-infrared spectral regime. Recent advances development low-loss nitride-based photonic integrated resonators have allowed them to outperform bulk external diode fiber both frequency agility 1550 nm-telecommunication window. Here, we demonstrate for first time a hybrid laser ...

III–V GaN-based nitride semiconductors have attracted interest because their bandgaps can be tuned by constructing alloys and superlattices, applying lattice strain. Herein, the influence of uniaxial equibiaxial strains on short-period InN/AlN superlattices is examined using first-principles calculations. For strain, change in same manner when are strained a- m-axis directions; however, a diffe...

We review the physical mechanisms that allow tuning of absorption and emission characteristics in monolayer semiconductors. use model system transition metal dichalcogenide mono-layers such as MoSe 2 or WSe due to their very efficient light-matter interaction availability high quality samples. For monolayers encapsulated hexagonal boron nitride both homogeneous inhomogenous contributions excito...