A thorough investigation of N-channel multifinger MOSFET capacitances in dark and under optical illumination is presented in this paper. The intrinsic and extrinsic capacitances are modelled and analysed considering the scaling effects for sub-micron scale MOSFET. Bias dependence is taken into account and capacitances essential for small signal model for RF frequency operation are evaluated. Th...

This work proposes a vertical gallium nitride (GaN) parallel split gate trench MOSFET (PSGT-MOSFET) device architecture suitable for power conversion applications. Wherein two gates, and field plate are introduced vertically on the sidewalls connected, respectively, to source. Technology computer-aided design (TCAD) simulator was used in process achieve specific on-resistance as low 0.79 mΩ.cm ...

Contemporary MOSFET mathematical models contain many parameters, most of which have little or no meaning to circuit designers. Designers therefore, continue to use obsolete models -such as the MOSFET square law -for circuit design calculations. However, low-voltage, lowpower systems development demands more advanced circuit design techniques. In this paper I present a brief literature review of...

This article presents some design guidelines for the RCD snubber of flyback converters. When the MOSFET turns off, a high-voltage spike occurs on the drain pin because of a resonance between the leakage inductor (Llk) of the main transformer and the output capacitor (COSS) of the MOSFET. The excessive voltage on the drain pin may lead to an avalanche breakdown and eventually damage the MOSFET. ...

This paper deals with the compact modeling of several emerging technologies: first, the double-gate MOSFET (DG MOSFET), and second, the carbon nanotube field-effect transistor (CNTFET). For CNTFETs, we propose two compact models, the first one with a classical behavior (like MOSFET), and the second one with an ambipolar behavior (Schottky-barrier CNTFET). All the models have been compared with ...

After explaining the basic operation of a SiC JFET plus silicon MOSFET cascode circuit, the dynamics of cascode switching will be discussed and the use of a QRR tester to evaluate the reverse-recovery characteristics of a cascode circuit will be explained. A comparison of the cascode’s reverse recovery with that of a SiC MOSFET reveals that the JFET cascode actually performs better than the SiC...

The noise assessment of Novel Transparent Gate Recessed Channel MOSFET has been investigated based on the simulated result from ATLAS device simulation. TCAD simulation results show TGRC-MOSFET divulges Conventional Recessed Channel (CRC)-MOSFET in terms of reduction in noise figure, cross correlation, noise conductance and parasitic capacitances. It also achieves higher optimum source impedanc...

We have investigated the feasibility of using a set of multiple MOSFETs in conjunction with the mobile MOSFET wireless dosimetry system, to perform a comprehensive and efficient quality assurance (QA) of IMRT plans. Anatomy specific MOSFET configurations incorporating 5 MOSFETs have been developed for a specially designed IMRT dosimetry phantom. Kilovoltage cone beam computed tomography (kV CBC...