This study was undertaken to elucidate the mechanism of biological repair at the tendon-bone junction in a rat model. The stump of the toe flexor tendon was sutured to a drilled hole in the tibia (tendon suture group, n = 23) to investigate healing of the tendon-bone junction both radiologically and histologically. Radiological and histological findings were compared with those observed in a sh...

Articles you may be interested in Single carbon nanotube photovoltaic device Scanning photocurrent and photoluminescence imaging of a frozen polymer p-n junction Appl. Large-signal and high-frequency analysis of nonuniformly doped or shaped pn-junction diodes Direct probe of excitonic and continuum transitions in the photocurrent spectroscopy of individual carbon nanotube p-n diodes Appl.

A pn-junction was successfully fabricated by depositing n-type CdSe thin films on p-type Si as a substrate using chemical bath deposition technique (CBD) at 70oC. Time of 6 hours and the preparing solution changed every 2 during deposition. Sodium Selenosulfate (with different weights) is source Se-2 ions, cadmium nitrate Cd+2 ions. The (I-V) characteristics for n-CdSe/p-Si junction show it beh...

A new approach to increasing the efficiency of silicon solar cells (SCs) is presented, which consists in creation surface light-trapping structures with a high antireflection ability form systems pointed whiskers (NCs) coaxial p–n junctions. The geometry junction justified terms collection and separation minority charge carriers (NCCs) due built-in electric field across junction. Received impro...

A monolithically integrated tunable laser and quantum-well phase modulator is demonstrated. Phase efficiency under forward bias is improved >20dB at low frequencies compared with reverse bias. Bandwidths >30 GHz are demonstrated in frequency modulation measurements. 2006 Optical Society of America OCIS codes: (230 4110) Modulators; (230 5590) Quantum Well Devices This research was supported by...

We present results from a p-n junction device physics model for GaInP/GaAs/GaInAsP/GaInAs four junction solar cells. The model employs subcells whose thicknesses have an upper bound of 5μm and lower bound of 200nm, which is just above the fully depleted case for the assumed doping of NA = 1 x 10 cm and ND = 1 x 10 cm. The physical characteristics of the cell model include: free carrier absorpti...

Photoelectrodes A bipolar-junction photoelectrode based on a p–n-junction GaN nanowire array is shown by Haiding Sun and co-workers in article number 2300911 to exhibit unambiguously bipolar photoresponse with an output of positive negative photocurrents under illumination 365 nm 265 light, respectively. Importantly, dual-band optical communication system incorporated such constructed using onl...

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and ...

The dependence of band-to-band tunneling in p+-Si1−xGex /n+-Si1−xGex homojunctions on Ge fraction and electric field is investigated in the range 2–3×108 V/m. Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 kA/cm2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunnel...

Trapping effects on two AlGaN/GaN Schottky diodes with a different composition of the AlGaN barrier layer were analyzed by current transient spectroscopy. The current transients were measured at a constant bias and at six different temperatures between 25 and 150 ̋C. Obtained data were fitted by only three superimposed exponentials, and good agreement between the experimental and fitted data wa...