Background: The purpose of this study was to investigate the various gantry angle and SSD dependencies of TLD and MOSFET dosimeters. Materials and Methods: LiF (Mg) TLD and MOSFET were used in this study. Dosimeter systems were calibrated and then irradiated at various gantry angle and SSD by applying 6 MV photon energy. Results: Based on the results, MOSFET changes were found to be in 2% range...

Image segmentation is a fundamental image processing technique to extract the required information from an image. The core element of any integrated circuit (IC) chip for signal metal oxide semiconductor field effect transistor (MOSFET). There are various limitations MOSFET in sub-nm process technology. This work introduces application new type MOSFET, which known as spatial wave function switc...

This paper addresses the device physics of a novel vertical power MOSFET through detailed TCAD simulation. The simulated I-V and C-V characteristics match well with the measured data. The bias dependence of electrical potential near the recess trench is identified as the cause of a sharp drop in output capacitance against drain voltage. Index Terms — power MOSFET, output capacitance, TCAD

A novel extraction method of high frequency small-signal model parameters for MOSFET is proposed. From S-parameter measurement, this technique accurately extracts the MOSFET model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled S-parameters fit the measured ones well without any optimizati...

In this paper, we solve the MOSFET RF circuit ordinary differential equations with the waveform relaxation method, monotone iterative method, and Runge-Kutta method. With the monotone iterative method, we prove each decoupled and transformed circuit equation converges monotonically. This method provides an alternative in the time domain numerical solution of MOSFET RF circuit equations.

In 1984 I had the honor of travelling around Europe with great Rudy Severns on a new technology teaching tour for Siliconix. was young applications engineer and then silicon power MOSFET. Engineers were using bipolar transistors in their switching supplies, his “Advanced Power MOSFET Seminar” pointed out many advantages (Si) MOSFET, which offered higher frequencies lower losses. discussed how t...

When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equiv...

A full-band Monte Carlo (MC) device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel metal-oxide-semiconductor fieldeffect transistor (MOSFET) structures. Simulated devices include a conventional MOSFET with a single source/drain implant, a lightly-doped drain (LDD) MOSFET, a silicon-on-insulator (SOI) MOSFET, and a MOSFET built on ...

The main features of the industry standard compact model HiSIM-HV for high-voltage MOSFETs are described. The basis of HiSIM-HV is a consistent physically correct potential determination in the MOSFET core and the surrounding drift regions, providing the high-voltage capabilities. Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS ...

In general, the Brushless DC motor speed controller uses an Atmega 16 microcontroller and a MOSFET, which often increases MOSFET's temperature, especially when is loaded. This article discusses use of IC NE555 CD4017 as frequency regulator to MOSFET gate by periodically igniting forward voltage from change in potentiometer value. We carried out test unloaded state with variations 2.5 Vac, 7.5 1...