نتایج جستجو برای: mos2 oxide
تعداد نتایج: 180840 فیلتر نتایج به سال:
Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respective...
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2 minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached...
MoS2, as a typical transition metal dichalcogenide, has attracted great interest because of its distinctive electronic, optical, and catalytic properties. However, its advantages of strong light absorption and fast intralayer mobility cannot be well developed in the usual reported monolayer/few-layer structures, which make the performances of MoS2-based devices undesirable. Here, large-area, hi...
امروزه خواص اپتیکی منحصر به فرد تک لایه mos2 به عنوان نیمه هادی دو-بعدی مورد توجه قرار گرفته است. در این مقاله از ضرایب فرنل برای تعیین خواص اپتیکی مانند جذب، بازتاب و عبور لایه mos2 در بازه ی تراهرتز استفاده شده است. ساختار کلی شامل دو محیط نیمه بی نهایت sio2 و هوا است که تک لایه mos2 در بین آنها قرار دارد. ما دریافتیم که بیشینه جذب برابر با مقدار اندک 6-10×5/2 است که در بازتاب داخلی، برای قطب...
Typical layered transition-metal chalcogenide materials, in particular layered molybdenum disulfide (MoS2) nanocomposites, have attracted increasing attention in recent years due to their excellent chemical and physical properties in various research fieldsHere, a general overview of synthetic MoS2 based nanocomposites via different preparation approaches and their applications in energy storag...
Despite the unique properties of black phosphorus (BP) and phosphorene, including high carrier mobility and in-plane anisotropy, their stability has been hampered by significant crystal deterioration upon exposure to oxygen and water. Herein, we investigate the chemical stability of MoS2-passivated black phosphorus (BP) or bilayer (2L) phosphorene van der Waals (vdW) heterostructures using the ...
Recently, two-dimensional materials such as molybdenum disulfide (MoS2) have been extensively studied as channel materials for field effect transistors (FETs) because MoS2 has outstanding electrical properties such as a low subthreshold swing value, a high on/off ratio, and good carrier mobility. In this study, we characterized the electrical and photo-responsive properties of MoS2 FET when sta...
MoS2 nanotubes (denoted as MoS2 NTs) assembled from well-aligned amorphous carbon-modified ultrathin MoS2 nanosheets (denoted as MoS2 NT@C) were successfully fabricated via a facile solvothermal method combined with subsequent annealing treatment. With the assistance of octylamine as a solvent and carbon source, interconnected MoS2 nanosheets (denoted as MoS2 NSs) can assemble into hierarchical...
Growing high quality monolayer MoS2 with strong photoluminescence (PL) is essential to produce light-emitting devices on the atomic scale. In this study we show that rhombic monolayer MoS2 with PL intensity 8 times stronger than those of chemical vapour deposition (CVD)-grown triangular and mechanically exfoliated (ME) monolayer MoS2 can be prepared by using CVD. Both Raman and PL measurements ...
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