GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...

This paper deals with the functionalization of nanocrystalline SnO₂ with Cu(II) complexes with organic ligands, aimed at the improvement of sensor selectivity towards gas molecules. For the synthesis of metalorganic/SnO₂ hybrid material complexes of Cu(II) with phthalocyanine, porphyrinines, bipyridine and azadithiacrown etherwere used. The analysis of gas sensor properties showed the possibili...

Self-assembled InGaN quantum dots (QDs) were grown on GaN templates by metalorganic chemical vapor deposition. 2D–3D growth mode transition through Stranski–Krastanov mode was observed via atomic force microscopy. The critical thickness for In0.67Ga0.33N QDs was determined to be four monolayers. The effects of growth temperature, deposition thickness, and V/III ratio on QD formation were examin...

Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO 2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300 K) photoluminescence (PL) peak wavelength increased with increasing maskopening spacing for a constant mask-opening diameter. For 5 lm d...

Thin film AlN has been grown on Al2O3 and GaAs substrates by metalorganic molecular beam epitaxy using amine bonded alane precursors and either tertiarybutylamine or nitrogen from a compact electron cyclotron resonance �ECR� plasma source operating at 2.45 GHz. Typical growth pressures were in the 0.5–1�10�4 Torr range. The growth rates, impurity backgrounds, and surface morphologies were exami...

Abstract We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on ScAlMgO 4 (0001) (SAM) substrate without low-temperature buffer layer. The was tensile-strained, and its stoichiometry corresponded to In 0.13 Ga 0.87 N. also present microstructural observation InGaN/SAM interface via integrated differential phase contrast-scanning transmission ele...

A novel scheme of flash evaporation feeding for MOCVD processes of multicomponent oxide films deposition is proposed. The scheme comprises 1) microdozage of organic solution of solid volatile precursors on the glass fiber belt, 2) evaporation of the solvent and 3) flash evaporation of MOC microdoses from the belt. The functioning of the designed feeder is described and the features of proposed ...

Book 15th American Conference on Crystal Growthand Epitaxyand11th Biennial Workshop on OMVPEand3rd International Symposium on Lasers andNonlinear Optical Materials July 20-24, 2003Keystone, Colorado Sponsored by theAmerican Association for Crystal Growth