نتایج جستجو برای: metallorganic chemical vapor deposition

تعداد نتایج: 477209  

2002
S. I. Shah W. Li C.-P. Huang O. Jung

The metallorganic chemical vapor deposition method was successfully used to synthesize pure TiO2 and Nd3 -, Pd2 -, Pt4 -, and Fe3 -doped TiO2 nanoparticles. Polycrystalline TiO2 structure was verified with x-ray diffraction, which showed typical characteristic anatase reflections without any separate dopant-related peaks. Transmission electron microscopy observations confirmed the existence of ...

1999
Susan L. Cohen Michael Liehr

The fundamental surface chemistry underlying selectivity in copper chemical vapor deposition (CVD) from COD-Cu-hfac and Cu(hfac), has been determined. Both electronic and chemistry contributions strongly influence the precursor reactivity on oxide as compared to metal surfaces. These results have important implications regarding the role of surface preparation and cleaning for initiating and ma...

2008
G. D. Yuan W. J. Zhang Y. Yang Y. Q. Li J. X. Wang

Centre Of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China c Functional Nano & Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China d Laboratory of Optoelectronic Functional Mate...

2014
Örjan Danielsson

ii by using insulation material correctly, a more uniform temperature distribution can be obtained. A model for the growth of SiC is used to predict growth rates at various process parameters. A number of possible factors influencing the growth rate are investigated using this model. The importance of including thermal diffusion and the effect of etching by hydrogen is shown, and the effect of ...

2008
J. Geiser R. Röhle

In this paper we present discretization and decomposition methods for a multi-component transport model of a chemical vapor deposition (CVD) process. CVD processes are used to manufacture deposition layers or bulk materials. In our transport model we simulate the deposition of thin layers. The microscopic model is based on the heavy particles, which are derived by approximately solving a linear...

2013
TING FUNG CHUNG TIAN SHEN HELIN CAO LUIS A. JAUREGUI WEI WU QINGKAI YU YONG P. CHEN

TING FUNG CHUNG∗,‡, TIAN SHEN∗, HELIN CAO∗,‡, LUIS A. JAUREGUI†,‡, WEI WU§, QINGKAI YU¶, DAVID NEWELL‖ and YONG P. CHEN∗,†,‡,∗∗ ∗Department of Physics, West Lafayette, Indiana 47907, USA †School of Electrical and Computer Engineering, West Lafayette, Indiana 47907, USA ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA §Department of Electrical and Computer Engi...

2012
Henrik Pedersen Mikhail Chubarov Hans Högberg Jens Jensen Anne Henry

Journal: :SIAM Journal of Applied Mathematics 2003
Christian A. Ringhofer Matthias K. Gobbert

We present a homogenization technique for rarefied gas flow over a microstructured surface consisting of patterns of periodic features. The length scale of the model domain is comparable to the mean free path of the molecules, while the scale of the surface patterns is much smaller. The flow is modeled by a system of linear Boltzmann equations with a diffusive boundary condition at the patterne...

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