A two-dimensional numerical analysis is presented to investigate the field effect transistor characteristics, the influence of the geometry of the component like distance between the gate and drain, or between gate and source. All simulations revealed the existence of a high electric field region near the gate contact, who create a depopulated zone around the gate, but the preceding studies hav...

This paper has two major goals: (1) to study the effect of the common practice of neglecting the convective terms (inertial approximation) in the hydrodynamic model in the simulation of n+-n-n+ diodes and two dimensional MESFET devices; and, (2) to test analytical criteria, formulated in terms of characteristic values of the Jacobian matrix, as a method of determining the impact of first deriva...

Antimonide-based photodetectors have recently been grown on a GaAs substrate by molecular beam epitaxy (MBE) and reported to have comparable performance to the devices grown on more expensive InSb and GaSb substrates. We demonstrated that GaAs, in addition to providing a cost saving substrate for antimonide-based semiconductor growth, can be used as a functional material to fabricate transistor...

A new large signal model for HEMT’s and MESFET’s, capable of ,modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances is described. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different d-doped pseudomorphic HEMTs o...