Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body like exciton-exciton annihilation (EEA) have been widely explored this material system. However, a similar effect for charged excitons (or trions), that is, trion-trion (TTA), is expected to be relatively suppressed due repulsive like-charges,...

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling t between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes th...

We give a finite presentation by generators and relations of unitary operators expressible over the {CNOT, T, X} gate set, also known as CNOT-dihedral operators. To this end, we introduce a notion of normal form for CNOT-dihedral circuits and prove that every CNOT-dihedral operator admits a unique normal form. Moreover, we show that in the presence of certain structural rules only finitely many...

We present an algorithm for efficiently approximating of qubit unitaries over gate sets derived from totally definite quaternion algebras. It achieves ε-approximations using circuits of length O(log(1/ε)), which is asymptotically optimal. The algorithm achieves the same quality of approximation as previously-known algorithms for Clifford+T [arXiv:1212.6253], V-basis [arXiv:1303.1411] and Cliffo...

A conceptually new logic gate based on DNA has been devised. Methoxybenzodeazaadenine ((MD)A), an artificial nucleobase which we recently developed for efficient hole transport through DNA, formed stable base pairs with T and C. However, a reasonable hole-transport efficiency was observed in the reaction for the duplex containing an (MD)A/T base pair, whereas the hole transport was strongly sup...

We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) ga...

In this paper, the control over the second gate voltage in a dual-gate FET resistive mixer is employed for amplitude remodulating the response signal in a retrodirective array. A resistive mixer is integrated with an aperture coupled square patch, and a data signal voltage, Vg2s(t), is appropriately conceived in order to control the magnitude of the device time-varying output conductance. Measu...

W e developed a multi layered model for t h e purposes such as mobil i ty m a n a g e m e n t , mobile activity modeling, and opt imal paging and mobile location tracking. A bott leneck in the forward control channel (FOCC) i s caused due t o constraints such as the l imited bandwidth and number of radio frequency channels, and i n e f i c i e n c y of convent ional mobile paging methods in mob...

Two-dimensional (2D) materials are a family of layered exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these attracts significant research interests. To unlock great potentials, gate-controlled dot architectures have been applied 2D their het...