نتایج جستجو برای: laser interference lithography

تعداد نتایج: 284095  

2015
W. Srituravanich N. Fang S. Durant M. Ambati C. Sun X. Zhang

Articles you may be interested in Interference lithography for metal nanopattern fabrication assisted by surface plasmon polaritons reflecting image

Journal: :Nature nanotechnology 2007
Joel Henzie Min Hyung Lee Teri W Odom

The interaction of light with surface plasmons--collective oscillations of free electrons--in metallic nanostructures has resulted in demonstrations of enhanced optical transmission, collimation of light through a subwavelength aperture, negative permeability and refraction at visible wavelengths, and second-harmonic generation from magnetic metamaterials. The structures that display these plas...

2001
Ralf K. Heilmann Paul T. Konkola Carl G. Chen G. S. Pati Mark L. Schattenburg

In traditional interference lithography, interference fringes are typically phase locked to a stationary substrate using analog homodyne photodiode signals that are fed back to control a phase-shifting device such as an electro-optic modulator or a piezoelectrically transduced mirror. Commercially available fringe-locking systems based on this approach often achieve stability of the interferenc...

2014
Ruifeng Liu Pei Zhang Yu Zhou Hong Gao Fuli Li

High-precision measurements implemented with light are desired in all fields of science. However, light acts as a wave, and the Rayleigh criterion in classical optics yields a diffraction limit that prevents obtaining a resolution smaller than the wavelength. Sub-wavelength interference has potential application in lithography because it beats the classical Rayleigh resolution limit. Here, we c...

2012
J. R. Freeman S. S. Harilal T. Sizyuk A. Hassanein

Extreme ultraviolet (EUV) emission from laser-produced plasmas (LPP) centered at 13.5 nm is considered a leading candidate for the light source in future lithography systems. Tin is currently the best material for generating this EUV emission since it emits strongly within the 13.5 nm region due to its various ionic states (SnSn). Highly efficient and low-debris LPPs are a pre-requisite for the...

2009
Corey P. Fucetola Hasan Korre Karl K. Berggren

We report demonstration of a low-cost (~ 1000 USD) interference lithography (IL) system capable of ~ 300-nm-pitch patterning. Our system includes a 405-nm GaN diode laser module, a machinist's block, a chrome-coated silicon mirror, substrate and double-sided tape. The laser and the machinist’s block were assembled in a linear configuration, and to complete the system, the mirror and substrate w...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید