نتایج جستجو برای: ion implantation

تعداد نتایج: 257694  

2015
K. M. Yu W. Walukiewicz J. Wu J. W. Beeman J. W. Ager E. E. Haller W. Shan H. P. Xin C. W. Tu M. C. Ridgway

2010
Brett J. Bell Jonas Salzmann Einar Nielsen Nicolas Gerber Guoyan Zheng Lutz-Peter Nolte Christof Stieger Marco Caversaccio Stefan Weber

Concerns of rising healthcare costs and the ever increasing desire to improve surgical outcome have motivated the development of a new robotic assisted surgical procedure for the implantation of artificial hearing devices (AHDs). This paper describes our efforts to enable minimally invasive, cost effective surgery for the implantation of AHDs. We approach this problem with a fundamental goal to...

2017
B Lacroix M P Chauvat

In this work, the damage formation in InN layers has been investigated subsequent to europium implantation at 300 keV and room temperature. The layers of several microns were produced by Hydride Vapour Phase Epitaxy and used as matrices for ion implantation experiments due to their good crystalline quality. From this investigation, it is shown that InN exhibits a low stability under rare earth ...

Journal: :Journal of nanoscience and nanotechnology 2011
Yuan Gao Chune Lan Jianming Xue Sha Yan Yugang Wang Fujun Xu Bo Shen Paul K Chu

We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion flu...

2003
B. Qi R. M. Gilgenbach M. C. Jones M. D. Johnston Y. Y. Lau L. M. Wang J. Lian A. Lazarides

Experiments are reported in which two configurations for ablation-plasma-ion-implantation ~APII! are characterized by diagnostics and compared. The first configuration oriented the target parallel to the deposition substrate. This orientation yielded ion-beam-assisted deposition of thin films. A delay (.5 ms) between laser and high voltage was necessary for this geometry to avoid arcing between...

2013
Kai-Lun Chiang Wei-Ping Lee Chien-Chi Lee Ching-Shan Sung Chen-Kang Wei Jer-Chyi Wang Ping Kao Chung-Yuan Lee Hsin-Huei Chen Chih-Yuan Hsiao Chao-Sung Lai

Fluorine (F) implantation with different dose post gate oxidation is used for investigating the performance of saddle-fin (S-Fin) array devices including gate-induced drain leakage (GIDL) and retention fail bit counts. Significantly lower retention fail counts of 35% were achieved in using a medium dosage of F implantation. Additional 18% retention fail count reduction was represented by F impl...

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