Impurity-free disordering IFD of the InAs quantum dots QDs capped with either an InP layer or an InGaAs/ InP bilayer is studied. The samples are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850 °C for 30 s. A large differential energy shift of 157 meV is induced by SiO2 in the QDs capped with an InGaAs/ InP bilayer. Contrary to the report...

In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the two acids, attributed to an anisotropy in step edge reactivity. The morphology of the etch pits in bulk InP suggests that the dislocations are ori...

In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMT’s) deliver lower output power than GaAs pseudomorphic HEMT’s (PHEMT’s) throughout most of the millimeter-wave regime. However, the superior power-added efficiency of InP HEMT’s when compared with GaAs PHEMT’s makes this technology attractive for many applications. The reason for the relatively ...

To meet the growing demand for a high-power Heterostructure Field-Effect Transistor (HFET) family based on InP, we have developed and characterized a circuitcapable InA1As/n+-InP HFET technology employing InP not merely as a substrate but also epitaxially as the channel and as an etch-stopper in a selectively-recessed gate scheme. This thesis presents an experimental assessment of the benefits ...

This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.

In this paper we present a manufacturable InP/InGaAs SHBT technology suitable for monolithic integration of highdata-rate optical receivers. We investigated the fabricated SHBT and found that they are essentially insensitive to processing variations. The satisfactory device yield and uniform device performance in a research laboratory environment suggested the robustness of InP-based SHBT techn...

We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.

This paper examines the molecular mechanism of InP colloidal quantum dot (QD) syntheses. Unlike methods for monodisperse PbSe and CdSe we found that existing InP syntheses result in total depletion of molecular phosphorous species following nucleation, so QD growth is due exclusively to non-molecular ripening. We find that amines inhibit precursor depletion via solvation, and these findings may...

We have used micro-photoand cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the locat...