نتایج جستجو برای: inp material
تعداد نتایج: 367987 فیلتر نتایج به سال:
Indium phosphide (InP) nanostructures have been synthesized by means of colloidal chemistry. Under appropriate conditions needle-shaped nanostructures composed of an In head and an InP tail with lengths up to several micrometers could be generated in a one-pot synthesis. The growth is interpreted in terms of simultaneous decomposition of the In precursor and in situ generation of In and InP nan...
As a potential biological imaging probe with a long-wavelength of emission, InP quantum dots were prepared via a high-temperature organic solution approach, and successfully transferred into an aqueous system through a ligand-exchange process using various functional surfactants. Photoluminescence and X-ray characterizations confirmed the desired properties of the InP quantum dots. The cytotoxi...
We report on the role of magic-sized clusters (MSCs) as key intermediates in the synthesis of indium phosphide quantum dots (InP QDs) from molecular precursors. Heterogeneous growth from the MSCs directly to InP QDs was observed without intermediate sized particles. These observations suggest that previous efforts to control nucleation and growth by tuning precursor reactivity have been undermi...
F. Granat, O. Dossin, R. Henrion, M. Pastor, C. Layssol-Lamour, D. Jacques, M. Delverdier, C. Trumel 1: Université de Toulouse, UPS, INP, ENVT, UMS006, Laboratoire Central de Biologie Médicale, F-31076 Toulouse, France 2: INSERM, UMS 006, Laboratoire Central de Biologie Médicale, F-31076 Toulouse, France 3: Université de Toulouse, UPS, INP, ENVT, Internal Medicine, Department of Small Animal Cl...
Total gene expression analysis (TOGA) was used to identify genes that are differentially expressed in brain regions between the alcohol-naive, inbred alcohol-preferring (iP), and -nonpreferring (iNP) rats. alpha-Synuclein, expressed at >2-fold higher levels in the hippocampus of the iP than the iNP rat, was prioritized for further study. In situ hybridization was used to determine specific brai...
We use infrared (IR) and Raman spectroscopies to investigate the optically active phonon modes in InP nanoparticles and InP/II–VI core-shell nanoparticles fabricated by similar colloidal chemistry methods. The IR transmission spectra of several InP nanoparticle samples exhibit a common absorption feature, which we assign to the Fröhlich mode. The Raman results for the same samples show transver...
Impurity-free disordering IFD of the InAs quantum dots QDs capped with either an InP layer or an InGaAs/ InP bilayer is studied. The samples are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850 °C for 30 s. A large differential energy shift of 157 meV is induced by SiO2 in the QDs capped with an InGaAs/ InP bilayer. Contrary to the report...
In this work, we report on wet-chemical defect revealing in InP fin structures relevant for device manufacturing. Both HCl and HBr solutions were explored using bulk InP as a reference. A distinct difference in pit morphology was observed between the two acids, attributed to an anisotropy in step edge reactivity. The morphology of the etch pits in bulk InP suggests that the dislocations are ori...
با استفاده از نظریه جرم موثر, ویژه مقادیر انرژی الکترونها و حفره ها در سیمهای کوانتومی با سطح مقطع مستطیلی و مربعی محاسبه شده است. در این تقریب ضمن ارائه شکل خاصی برای وابستگی مکانی جرم موثر حاملها, ارتفاع سد پتانسیل نیز محدود در نظر گرفته شده است. با استفاده از داده های موجود برای سیستم های as/inp in0.53 ga0.47و gaas/ga0.63al0.37as, ویژه مقادیر انرژی محاسبه و با نتایج به دست آمده از روشهای نظر...
In spite of their outstanding transport characteristics, InP high-electron mobility transistors (HEMT’s) deliver lower output power than GaAs pseudomorphic HEMT’s (PHEMT’s) throughout most of the millimeter-wave regime. However, the superior power-added efficiency of InP HEMT’s when compared with GaAs PHEMT’s makes this technology attractive for many applications. The reason for the relatively ...
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