The origins of gate-induced hysteresis in carbon nanotube fi eld-effect transistors are explained and techniques to eliminate this hysteresis with encapsulating layers of methylsiloxane and modifi ed processes for nanotube growth are reported. A combined experimental and theoretical analysis of the dependence of hysteresis on the gate voltage sweep-rate reveals the locations, types, and densiti...

We use the Cellular Potts Model (CPM) to study the contact angle (CA) hysteresis in multiphase (solid-liquid-vapour) systems. We simulate a droplet over the tilted patterned surface, and a bubble placed under the surface immersed in liquid. The difference between bubbles and droplets was discussed through their CA hysteresis. Dependency of CA hysteresis on the surface structure and other parame...

We have studied the properties of metal-oxide-semiconductor structures fabricated by plasma enhanced 'chemical vapor deposition of Si02 upon GaAs substrates. We have characterized the dependence of these properties upon the presence of a silicon interlayer, the type and the degree of misorientation of the substrate, and the type of plasma enhancement. We conclude that the presence of a silicon ...

The phase transition between the intermediate and normal states in type-I superconducting films is investigated using magneto-optical imaging. Magnetic hysteresis with different transition fields for collapse and nucleation of superconducting domains is found. This is accompanied by topological hysteresis characterized by the collapse of circular domains and the appearance of lamellar domains. ...

Memcapacitor is a two-port circuit element with a memory. When excited by AC current or voltage, it has a zero-crossing charge-voltage hysteresis curve. The memcapacitor hysteresis curve should be taught to engineering students or engineers, who want to work in this area. In this work, an easily-comprehensible explanation of hysteresis curve of flux-dependent memcapacitor is given using Taylor ...

Dynamic hysteresis modeling and its application in numerical field analysis are challenging tasks. This paper presents a measurement system to realize and to measure frequency-dependent behavior of ferromagnetic hysteresis. The well-known static Preisach model of hysteresis has been extended to simulate the dynamic behavior. The full paper will present the model in detail as well as its applica...

Electron transport layer (ETL) is pivotal to charge carrier for PSCs reach the Shockley–Queisser limit. This study provides a fundamental understanding of heterojunction electron layers (ETLs) at atomic level stable and efficient perovskite solar cells (PSCs). The bilayer structure an ETL composed SnO2 on TiO2 was examined, revealing critical factor limiting its potential obtain performance. Al...

Halide perovskite (HaP) semiconductors are revolutionizing photovoltaic (PV) solar energy conversion by showing remarkable performance of solar cells made with HaPs, especially tetragonal methylammonium lead triiodide (MAPbI3). In particular, the low voltage loss of these cells implies a remarkably low recombination rate of photogenerated carriers. It was suggested that low recombination can be...

The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal-insulator-semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated alumini...

This paper tests two heuristic approaches by applying them to the magnetic hysteresis model parameter identification. Both Preisach and Jiles-Atherton hysteresis models have been used. The implemented investigated heuristics are genetic algorithm and simulated annealing. Both the heuristic algorithms efforts the knowledge of the B-H experimental points of the hysteresis loop to be modeled accor...