In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silico...

Abstract A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 has been investigated. The measured Gummel characteristics illustrate that the collector current and base both shift higher as decreases. f T /f max are extracted be 23/40 GHz at 300K, 28/40 90 K, 25/37GHz 10K, respectively. effective amplification become...

the mobility result is comparable to that achieved in other ZDEG structures where the GaAs layer has been grown on the modulation doped layer of AlGaAs.” In future designs the precise collector barrier profile will be altered to increase this transfer efficiency. Even allowing for possible parallel conduction in the collector barrier at room temperature in our present structure, the base-base r...

This paper presents a novel technique to eliminate non-simultaneous triggering e ects in nger-type ESD protection transistor using SiGe heterojunction buried layer structures. It is con rmed that lower snapback voltage and maximum lattice temperature are obtainable in the new structure based on device simulation. As a result, current localization and lattice overheating of a nger-type protectio...

AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are used for digital and analog microwave applications with frequencies as high as Ku band. HBTs can provide faster switching speeds than silicon bipolar transistors mainly because of reduced base resistance and collector-to-substrate capacitance. HBT processing requires less demanding lithography than GaAs FETs, therefore, HBTs can cost les...

The source resistance of a heterojunction field-effect transistor ~HFET!, whose reduction is mandatory for high-performance devices, consists of an ohmic contact resistance and an access resistance. The access region is located between the geometrical source and the geometrical source side of the gate contact. By means of a quantum-mechanical modeling program, the effect of changes in layer str...

We demonstrate that high-injection barrier effects associated with the collector-base silicon-germanium (SiGe) to silicon (Si) heterojunction are an important design constraint for SiGe heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. Due to its thermally activated nature, these barrier effects can have important dc and ac consequences at cryogenic temperatures eve...