The monolithic integration structure of the AlGaN/InGaN/GaN−based high electron mobility transistor (HEMT) and light−emitting diode (LED) is attractive in LED lighting visible light communication (VLC) systems owing to reduction parasitic elements by removing metal interconnections. Due band−offset polarization effect, inserting a certain thickness InGaN layer into traditional AlGaN/GaN single ...

We report a novel broadband slot-spiral antenna that can be integrated with high-electron-mobility transistor (HEMT) terahertz (THz) detectors. The effect of various parameters on the transmission efficiency structure at 150–450 GHz is investigated systematically. performances and spiral both HEMTs are compared. results show has better miniaturization capability than structure. A formula for re...

Simulation and Optimization of δ-doped AlInAs/InGaAs HEMT for High Frequency Applications Farhan Aziz, M.J. Siddiqui Department of Electronics and Communication Engg. BSACET, Mathura, U.P., India Department of Electronics Engg. Zakir Husain College of Engg. and Technology Aligarh Muslim University, Aligarh, U.P., India ____________________________________________________________________________...

The present work uses finite element thermal simulations of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) to evaluate the impact of device design parameters on the junction temperature. In particular the effects of substrate thickness, substrate thermal conductivity, GaN thickness, and GaN-to-substrate thermal boundary resistance (TBR) on device temperature rise are quantified....

Planar GaAs Schottky diode based multiplier chains driven by HEMT power amplifiers have now demonstrated useful power beyond the 1 THz range. This paper will briefly review the state-of-the-art in planar Schottky diode multiplier chains for coherent detection. Future challenges and promising emerging technologies will also be outlined.

Silicon-based power switching devices have improved dramatically since their inception decades ago. An impressive example: Si super-junction MOSFETs, such as CoolMOS FETs, broke the theoretical Si limit in the tradeoff between blocking voltage and resistance (Ref. 1). However, the large amount of minority charge in the body diode results in large reverse recovery losses in hardswitched bridge c...

In this work, the influence of acceptor-type trap on threshold voltage and short-channel effect is analyzed modeled for GaN MOS-HEMT. Particularly, analysis modeling are carried out with dependences traps' ionization condition gate drain considered. From calculated results based proposed model, it found that both interface buffer play a vital role in reduction AlGaN/GaN MOS-HEMT, due to trap's ...