We present an efficient approach to study the carrier transport in graphene nanoribbon (GNR) devices using the non-equilibrium Green's function approach (NEGF) based on the Dirac equation calibrated to the tight-binding π-bond model for graphene. The approach has the advantage of the computational efficiency of the Dirac equation and still captures sufficient quantitative details of the bandstr...

carbon nanotube/graphene nanoribbon-silicon interfaces Ajit K. Vallabhaneni, Bo Qiu, Jiuning Hu, Yong P. Chen, Ajit K. Roy, and Xiulin Ruan School of Mechanical Engineering, Purdue University, West Lafayette, Indiana 47907, USA School of Electrical Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana ...

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We investigate the effects of nitrogen impurities on the electronic properties of quantum dots realized in Z-shaped graphene nanoribbon junction. The system is studied using first principle calculations, based on the local spin density approximation (LSDA). Our results indicate that the presence of the impurities drastically changes the configuration of the localized states in the quantum dot. ...

By applying tensile local uniaxial strain on 5 nm of drain region and compressive local uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon tunneling field-effect transistor (GNR-TFET), we propose a new bandgap-engineered (BE) GNR-TFET. Simulation of the suggested device is done based on non-equilibrium Green’s function (NEGF) method by a mode-space approach...

We study the motion of C₆₀ fullerene molecules and short-length carbon nanotubes on graphene nanoribbons. We reveal that the character of the motion of C₆₀ depends on temperature: for T < 150 K the main type of motion is sliding along the surface, but for higher temperatures the sliding is replaced by rocking and rolling. Modeling of the buckyball with an included metal ion demonstrates that th...

Scanning tunnelling microscopy and spectroscopy experiments complemented by first-principles calculations have been conducted to study the electronic structure of 4 monolayer Bi(110) nanoribbons on epitaxial graphene on silicon carbide [4H-SiC(0001)]. In contrast with the semimetal property of elemental bismuth, an energy gap of 0.4 eV is measured at the centre of the Bi(110) nanoribbons. Edge ...