Attaining low-resistivity AlxGa1–xN layers is one keystone to improve the efficiency of light-emitting devices in ultraviolet spectral range. Here, we present a microstructural analysis AlxGa1–xN/Ge samples with 0 ≤ x 1, and nominal doping level range 1020 cm–3, together measurement Ge concentration its spatial distribution down nanometer scale. 0.2 do not any sign inhomogeneity. However, > 0.4...

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Germanium (Ge) has advantageous materials properties and is considered as a mainstream material for nanoelectronic applications. Understanding dopant–defect interactions important to form well-defined doped regions devices. Gallium (Ga) key p-type dopant in Ge. In the present density functional theory study, we concentrate on structures electronic of Ga Ge presence vacancies oxygen. We provide ...

We study the relationship between the circular polarization of photoluminescence and the magnetic-fieldinduced spin polarization of the recombining charge carriers in bulk Si and Ge/Si quantum dots. First, we quantitatively compare experimental results on the degree of circular polarization of photons resulting from phonon-assisted radiative transitions in intrinsic and doped bulk Si with calcu...

We have developed a data transparent optical packet switch prototype employing wavelength conversion based on four-wave mixing. The switch is composed of an electro-optical control unit and an all-optical switching segment. To achieve higher switching efficiencies, Ge-doped silica suspended-core and chalcogenide arsenicselenide single-mode fibers were experimentally evaluated and compared to co...

Impurity doping is the most important technique to functionalize semiconductor nanowires. The crucial point is how the states of impurity atoms can be detected. The chemical bonding states and electrical activity of boron (B) and phosphorus (P) atoms in germanium nanowires (GeNWs) are clarified by micro-Raman scattering measurements. The observation of B and P local vibrational peaks and the Fa...

The vapor-liquid-solid (VLS) process of semiconductor nanowire growth is an attractive approach to low-dimensional materials and heterostructures because it provides a mechanism to modulate, in situ, nanowire composition and doping, but the ultimate limits on doping control are ultimately dictated by the growth process itself. Under widely used conditions for the chemical vapor deposition growt...

Ge-rich and N-doped Ge-Sb-Te thin films patterned structures for memory applications are investigated in situ during annealing up to 500 °C with a heating rate of 2 °C/min using synchrotron x-ray diffraction. The initial material is amorphous. Under these conditions, Ge crystallization occurs at 340 precedes the one cubic Ge2Sb2Te5 by about 15 °C. In monitoring diffraction allows quantification...

Although it is frequently hypothesized that surface (like surface charge) and physical characteristics (like particle size) play important roles in cellular interactions of nanoparticles (NPs), a systematic study probing this issue is missing. Hence, a comparative cytotoxicity study, quantifying nine different cellular endpoints, was performed with a broad series of monodisperse, well character...