electronic effects were investigated on the singlet–triplet energy gaps of divalent unsaturated seven- membered ring r2c6h6m (m=c, si, ge, sn, pb, r= –h, -ch3, i-pr , t-bu) at b3lyp/6-311++g** level. all the triplet states of r2c6h6c were more stable than the related the singlet states while all the singlet states of r2c6h6m (m= si, ge, sn, pb, r= –h, -ch3, i-pr , t-bu) were more stable than th...

specification of a lock. What is a suitable abstract specification for a locking structure? To answer this question, we adopt the idea of specifying concurrent data structures via abstract predicates [1] and provide a lock interface in the form of two abstract procedures: lock and unlock. Every data structure, implementing the lock protocol, will require to provide the implementation of these p...

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS)...

The local structure of the enumeration degrees Ge is the partially ordered set of the enumeration degrees below the first jump 0e of the least enumeration degree 0e. Cooper [3] shows that Ge consists exactly of the Σ2 enumeration degrees, degrees which contain Σ2 sets, or equivalently consist entirely of Σ 0 2 sets. In investigating structural complexity of Ge, the natural question of what othe...

For the first time, Zr–Ge–N films were deposited on silicon and steel substrates by sputtering a Zr–Ge composite target in reactive Ar– N2 mixture. The films were characterised by electron probe microanalysis, X-ray diffraction, micro-Raman spectroscopy and depth-sensing indentation. The effects of the Ge content and substrate bias voltage on the films’ structure, internal stress, hardness and ...

We report on novel ferromagnetic Mn/Ge multilayers for spintronics applications investigated both experimentally and theoretically. Two Mn/Ge multilayers are grown on GaAs (001) substrates by molecular beam epitaxy. The period of each multilayer consists of an Mn layer of varying thickness (0.6 and 5 Å) and a 10 Å thick Ge spacer layer. From temperaturedependent magnetization and hysteresis loo...

We make a brief review on the effect of silver photodiffusion in Ge-chalcogenide glasses and report some of our recent results in this aspect. Using Raman spectroscopy and X-ray diffraction analysis we demonstrate that the hosting backbone undergoes depletion in chalcogen due to the specific conditions of photodiffusion and the diffusion products are silver chalcogenides. While in the Ge–Se sys...

Correlations among interface properties and chemical bonding characteristics in HfO 2 /GeO x N y /Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO 2 atomic layer deposition (ALD). Ultra thin (~1.1 nm), thermally stable and aqueous etch-resistant GeO x N y interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to st...

The final assembly of herpes simplex virus (HSV) involves binding of tegument-coated capsids to viral glycoprotein-enriched regions of the trans-Golgi network (TGN) as enveloped virions bud into TGN membranes. We previously demonstrated that HSV glycoproteins gE/gI and gD, acting in a redundant fashion, are essential for this secondary envelopment. To define regions of the cytoplasmic (CT) doma...