نتایج جستجو برای: gate voltage

تعداد نتایج: 145058  

Journal: :Microelectronics Reliability 2011
E. A. Douglas C. Y. Chang D. J. Cheney B. P. Gila C. F. Lo Liu Lu M. R. Holzworth P. G. Whiting K. S. Jones G. D. Via Jinhyung Kim Soohwan Jang Fan Ren Stephen J. Pearton

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both onand off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions r...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

2007
A. L. P. Rotondaro R. T. Laaksonen S. P. Singh

The nitrogen concentration of ultrathin gate oxides (sub-1.3 nm) was varied in a wide range (from 13 % to 23 %). The threshold voltage and the channel carrier mobility of advanced 65 nm technology CMOSFET transistors fabricated with these oxides were analyzed. It was observed that increasing the nitrogen concentration in the gate oxide results in a negative shift of the threshold voltage for bo...

Journal: :CoRR 2015
Anirudh Iyengar Swaroop Ghosh

Semiconductor supply chain is increasingly getting exposed to variety of security attacks such as Trojan insertion, cloning, counterfeiting, reverse engineering (RE), piracy of Intellectual Property (IP) or Integrated Circuit (IC) and side-channel analysis due to involvement of untrusted parties. In this paper, we propose transistor threshold voltage-defined switches to camouflage the logic gat...

2014
M. A. Lekshmi Devi S. Shantha K. Porkodi C. Subha

This paper explores the advantages and implementation of Digital Signal Processing (DSP) TMS 320F2812 to generate gate pulses. The main features of this DSP are elaborated. The technique to obtain gate pulses in different pulse width modulation methods in order to control three-phase voltage source inverter is explained systematically. The steps needed to develop the program are highlighted in ...

2009
Chao-Wei Lin Chih-Wei Yang Chao-Hung Chen Che-Kai Lin Hsien-Chin Chiu

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...

2015
Subodh Wairya

This paper presents a two stage operational transconductance amplifier realized using floating gate MOSFETs in differential inputs. A configuration of two stage operational transconductance amplifier using floating gate MOSFET for low power and low voltage applications is presented. Here we design a two stage operational transconductance amplifier using floating gate MOSFET in HSPICE 180nm CMOS...

2008
T. ABALLO L. CABRIA J. A. GARCÍA J. M. ZAMANILLO A. MEDIAVILLA F. R. MARANTE

In this paper, the control over the second gate voltage in a dual-gate FET resistive mixer is employed for amplitude remodulating the response signal in a retrodirective array. A resistive mixer is integrated with an aperture coupled square patch, and a data signal voltage, Vg2s(t), is appropriately conceived in order to control the magnitude of the device time-varying output conductance. Measu...

2009
Biswanath Chakraborty Anindya Das A. K. Sood

Biswanath Chakraborty, Anindya Das and A. K. Sood∗ Department of Physics, Indian Institute of Science , Bangalore 560012, India Abstract We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the gate capacitance is ...

2013
Shikha Singh Seema Narwal

This paper presents a new design for 14 transistor single bit full adder, implemented using five transistor XNOR/XOR cell and transmission gate multiplexer. For transmission gate multiplexer complementary gate control signals are required and in 14 transistor full Adder both XOR and XNOR signals are generated. XNOR/XOR cell shows high power consumption than single XNOR gate. So, 8 transistor fu...

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