The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross sections are studied theoretically. We show that at nanoscale dimensions, the nonpolar hexagonal system exhibits degenerate quasi-one-dimensional electron gases at the hexagon corners, which transition to a core-centered electron gas at lower doping. In contras...

The reconstruction and growth kinetics of gallium nitride (0001) and (000 ) surfaces are studied using scanning tunneling microscopy, reflection high-energy electron diffraction, and low-energy electron diffraction. Results for bare GaN surfaces are summarized, with particular attention paid to the “pseudo-1×1” reconstruction of the (0001) face. Changes in the surface structure and kinetic proc...

Gallium Nitride (GaN) devices are desirable for the application of high-power and high-speed operation electron devices because of their excellent properties such as large energy band gap and high saturated electron velocity. We have already developed and produced GaN HEMTs*1 on SiC substrate targeting the frequency range of L/S-band mainly for the amplifier used in cellular base stations. The ...

In order to produce semi-insulating, thick layers of gallium nitride we try to incorporate iron into our hydride vapor phase grown material. As past experiments have shown, a solid iron source inside the reactor is not adequate in terms of controllability and purity. Therefore our reactor has been upgraded with a gasoues ferrocene source. This article demonstrates first promising results and sh...

Electronic generation of terahertz (THz) signals using gallium nitride (GaN) is predicted to exhibit high efficiency. Theory by Ridley et al. [1] shows that electrons in an ultra thin (20-120 nm) epilayer of intrinsic GaN can be ballistically accelerated to negative mass states (under the influence of an applied bias voltage of 2.7 volts) with hot enough injection. If a majority of the electron...