In this paper, we present a study of the effect silicon substrate modification by focused ion beams on subsequent growth GaAs layers molecular beam epitaxy. We demonstrate that when samples exposed to irradiation at various accelerating voltages and passes are annealed in absence arsenic flux, an increase depth modified Si areas occurs. At same time, crystallization gallium accumulations during...

Electrochemical deposition of silicon at room temperature is problematic due to the intrinsically low conductivity deposits. This study reports photoelectrochemical (PEC) (Si) and silicon–carbon (Si–C) layers from an ionic liquid 40 °C using tetrachloride (SiCl4) as a precursor. Amorphous are deposited on p-type (p-Si), gallium arsenide (p-GaAs), aluminum–copper alloy AA2024. The semiconductor ...

Abstract Ultrafast laser inscription (ULI) inside semiconductors offers new perspectives for 3D monolithic structures to be fabricated and functionalities added in electronic photonic microdevices. However, important challenges remain because of nonlinear effects such as strong plasma generation that distort the energy delivery at focal point when exposing these materials intense infrared light...

Abstract A 5-bit MMIC serial to parallel converter has been designed in Gallium Arsenide. It is intended to be used together with a 5-bit True Time Delay (TTD) circuit, but it can easily be expanded into an arbitrary number of bits. The circuit has been designed with a logic style called DCFL, and a 0.20 μm process (ED02AH) from OMMIC has been used to fabricate the circuit. The chip size of thi...

In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia (NH3) environment is reported. The GaAs were grown at 800, 900, 1000 ∘C, process was carried out 900 ∘C with an NH3:H2 gasses ratio. without analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflec...

X-ray diffraction characterization of materials used in traditional silver halide and digital semiconductor photographic systems is described. Silver halide grains precipitated as multicomponent AgBr1-xIx phases were found to be comprised of a core with three shells. The composition of the core and shells was determined using lattice constant measurements. Nanocomposites for photographic antist...

This paper provides the details of a study on effects electron irradiation two Low Noise Amplifiers (LNA), Gallium-Arsenide (GaAs) pseudomorphic high mobility transistor (pHEMT) based and Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT)-based. Previous studies have shown that properties GaAs SiGe HBT's are very tolerant gamma, neutron, proton without additional radiation hardeni...

We present gallium antimonide (GaSb) p–i–n photodiodes for use as thermophotovoltaic (TPV) cells grown on gallium arsenide (100) substrates using the interfacial misfit array method. Devices were grown using molecular beam epitaxy and fabricated using standard microfabrication processes. X-ray diffraction was used to measure the strain, and current–voltage (I–V) tests were performed to determin...