Modern microelectronics and nanoelectronics devices rely on the drift of electron localized at the interfaces between different materials, such silicon and silicon dioxide or gallium arsenide and aluminum gallium arsenide. Hence, the electron drift transit time in the active region of a device determines the maximum device speed. Instead of the electron drift, we propose to use the waves of the...

he dentin hypersensitivity is a painful condition rather prevalent in the general population. There are several ways of treatment for such condition, including the low intensity lasers. The proposal of this study was to verify the effectiveness of the Gallium-Aluminum-Arsenide diode laser in the treatment of this painful condition, using a placebo as control.Materials and methods: Thirty-two pa...

This study determined the effects of gallium-aluminum-arsenide laser (GaAlAs), gallium-arsenide laser (GaAs) and Dersani healing ointment on skin wounds in Wistar rats. The parameters analyzed were: type I and III collagen fiber concentrations as well as the rate of wound closure. Five wounds, 12 mm in diameter, were made on the animals' backs. The depth of the surgical incision was controlled ...

The paper describes the infrared (IR) thermal measurement facility at De Montfort University and the use of the facility to make IR temperature measurements on RF devices. Some of the limitations with conventional IR measurements will be described; including effects related to the low emissivity and optical transparency of materials. A novel method for improving the accuracy of IR temperature m...