Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical t...

Ultra-low effective oxide thickness (EOT) Ge MOS devices with different HfON/HfAlO stacks and sintering temperatures were investigated in this work. Both the reduced gate leakage current and reliability improvement can be achieved by either a suitable gate dielectric stack or sintering temperature. As a whole, a 0.5 nm thick HfAlO in gate dielectric stack and a sintering temperature at 350 C ar...

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristi...

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity a...

We introduce the autozeroing floating-gate (AFGA) secondorder section. We built this second-order filter where the corner frequency and are electronically tunable based on a classic filter topology and principles of operational transconductance amplifiers. We built this secondorder filter using three AFGAs—our floating-gate amplifier that sets its operating point by the interaction of hot-elect...

In this paper we present a floating-Gate differential amplifier input stage with tunable gain. The input stage can be used in a differential ultra lowvoltage (ULV) floating gate (FG) transconductance amplifier. Measured data for the subcircuits operating at 0.8V, 0.5V and 0.3V are provided.

For digital circuits with ultra-low power consumption, floating-gate circuits have been considered to be a technique potentially better than standard static CMOS circuits. By having a DC offset on the floating gates, the effective threshold voltage of the floating-gate transistor is adjusted and the speed and power performance can be altered. In this paper the basic performance related properti...

The High-K Metal Gate (HKMG) technology has become the keystone to reduce gate leakage and enable the continuous scaling of transistors towards 32nm node and beyond. However, the reduction of gate leakage in 32nm HKMG PD (Partially Depleted)-SOI (Silicon-On-Insulator) CMOS (Complementary Metal–Oxide–Semiconductor) inevitably changes the modeling methods for gate current, floating body effect, a...

We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current is proportional to junction current. We find the low gate leakage current to be caused by field ionization (FI) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge accumulati...