The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-voltage profiling. The metal-oxide-semiconductor FET (MOSFET) with Al2O3 gate dielectric shows a d...

We show that polycyclic aromatic hydrocarbon (PAH) based field effect transistor (FET) arrays can serve as excellent chemical sensors for the detection of volatile organic compounds (VOCs) under confounding humidity conditions. Using these sensors, w/o complementary pattern recognition methods, we study the ability of PAH-FET(s) to: (i) discriminate between aromatic and non-aromatic VOCs; (ii) ...

We have modeled InAs nanowires using finite element methods considering the actual device geometry, the semiconducting nature of the channel and surface states, providing a comprehensive picture of charge distribution and gate action. The effective electrostatic gate width and screening effects are taken into account. A pivotal aspect is that the gate coupling to the nanowire is compromised by ...

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...

In this paper, a Junctionless Accumulation Mode Ferroelectric Field Effect Transistor (JAM-FE-FET) has been proposed and assessed in terms of RF/analog specifications for varied channel lengths through simulations using TCAD Silvaco ATLAS simulator, the Shockley-Read-Hall (SRH) recombination, ferro, Lombardi CVT, fermi LK models. Major analog metrics like transconductance (gm), intrinsic gain (...

A linear stacked field-effect transistor (FET) power amplifier (PA) is implemented using a 0.18-μm silicon-on-insulator CMOS process for W-CDMA handset applications. Phase distortion by the nonlinear gate-source capacitance (Cgs) of the common-source transistor, which is one of the major nonlinear sources for intermodulation distortion, is compensated by employing a PMOS linearizer with improve...

Mechanoreceptors are essential components of the somatosensory system that convert received mechanical signals into electrical can be sent to brain. These receptors provide ability sense a variety stimuli from external environment, including touch, vibration, and heat. do not monotonically; in addition, several fundamental characteristics embedded mechanoreceptors, thresholds adaptation propert...

The magnitude and direction of the electro-osmotic flow (EOF) inside a microfabricated fluid channel can be controlled by a perpendicular electric field of 1.5 megavolts per centimeter generated by a voltage of only 50 volts. A microdevice called a "flowFET," with functionality comparable to that of a field-effect transistor (FET) in microelectronics, has been realized. Two flowFETs integrated ...

Transistor tapering is a widely used technique applied to optimize the geometries of CMOS transistors in high-performance circuit design with a view to minimizing the delay of a FET network. Currently, in a long FET network where MOS devices are stacked over one another to form a series chain network, the dimensions of the transistors are decreased from the bottom transistor to the top transist...

In this article, we propose a Flexure-FET (flexure sensitive field effect transistor) ultrasensitive biosensor that utilizes the nonlinear electromechanical coupling to overcome the fundamental sensitivity limits of classical electrical or mechanical nanoscale biosensors. The stiffness of the suspended gate of Flexure-FET changes with the capture of the target biomolecules, and the correspondin...