Rationally controlled growth of inorganic semiconductor nanowires is important for their applications in nanoscale electronics and photonics. In this article, we discuss the rational growth, physical properties, and integration of nanowires based on the results from the authors' laboratory. The composition, diameter, growth position, and orientation of the nanowires are controlled based on the ...

A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm−3. Theoretical estimations and annealing experiments indicate that the nanowi...

Thermoelectric Properties of Bismuth Nanowires: Bismuth nanowires were electrochemically deposited in ion track-etched polymer membranes and their transport properties were studied. The Seebeck coefficients of single-and polycrystalline nanowires were measured as a function of wire diameter and temperature. For that purpose, a sample holder was designed that is capable of contacting nanowire ar...

In this paper, heterojunction nanowires of Ni-Se are fabricated via template-assisted electrodeposition process. Nanowires are characterized by scanning electron microscopy (SEM), Energy dispersive X-Ray Spectroscopy (EDS), X-ray diffractometry and electrical transport studies. SEM photographs reveal the uniform and dense growth of Ni-Se nanowires. X-ray diffraction pattern shows the crystallin...

In2O3 semiconductor nanowires were synthesized by the chemical vapor deposition method through carbon thermal reduction at 900 degrees C with 95% Ar and 5% O2 gas flow. The In2O3 nanowires were characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence spectroscopy (PL). For the first time, we observed t...

Phase-change memory materials have stimulated a great deal of interest although the size-dependent behaviors have not been well studied due to the lack of method for producing their nanoscale structures. We report the synthesis and characterization of GeTe and Sb(2)Te(3) phase-change nanowires via a vapor-liquid-solid growth mechanism. The as-grown GeTe nanowires have three different types of m...

Elevated-temperature synthesis has been used to generate side-by-side biaxially structured silicon carbide–silica nanowires. The axial growth direction approaches @311# for nanowires with a high density of microtwins and is @211# for defect-free nanowires. The structure of these nanowires, their cross-sectional shape, and their structural transformation between a biaxial and coaxial configurati...

Large-area Ag nanowires are ordered by spontaneous spreading of volatile droplet on a wettable solid surface. Compared with other nanowires orientation methods, radial shaped oriented Ag nanowires in a large ring region are obtained in an extremely short time. Furthermore, the radial shaped oriented Ag nanowires are transferred and aligned into one direction. Based on the hydrodynamics, the coa...

Metal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such a...

Suspended molecules of DNA are used as substrates for deposition of various metals by DC sputtering. The result is the formation of metallic nanowires, most with diameters of 10-50 nm. Homogeneous wires have been observed when a proper metal is chosen. For the first time, these DNA-templated nanowires are fabricated on substrates conducive to transmission electron microscopy. TEM and SEM analys...