The authors describe the dry etching characteristics of amorphous As2S3 films in CHF3 plasma and the development of an optimized fabrication process for compact waveguides. The observed etching behavior is due to the relative densities of fluorine atoms, polymer precursors, and ions in the plasma which are controlled by the process parameters. In particular, the flow rate of the CHF3 gas has a ...

background and aims. the aim of this study was to compare shear bond strength (sbs) of metal and ceramic brackets bonded to enamel using acid versus er:yag laser etching. materials and methods. eighty premolars were divided into 4 groups: am (acid etching/ metal brackets), ac (acid etching/ ceramic brackets), lm (laser etching/ metal brackets) and lc (laser etching/ ceramic brackets). enamel co...

During fluorocarbon plasma etching of SiO2 , a polymer passivation layer is generally deposited on the surface of the wafer. The polymer layer regulates the etch by limiting the availability of activation energy and reactants, and providing the fuel for removal of oxygen. To investigate these processes, a surface reaction mechanism for fluorocarbon plasma etching of SiO2 has been developed. The...

Gate oxide scaling e€ect on plasma charging damage is discussed for various IC fabrication processes such as metal etching, contact oxide etching, high current ion implantation, and via contact sputtering. Capacitance distortion, stress-induced leakage current, MOSFET characteristics, and circuit performance are used for evaluating the charging damage. We observed that very thin gate oxides are...

Introduction: Dental ceramics are considered as materials that can restore the appearance of natural teeth. Etching the inner surface of a ceramic restoration with hydrofluoric acid (HF) followed by using a silane coupling agent is a well-known and recommended method to increase the bond strength. The aim of etching on ceramic structure is to enhance the surface roughness (Ra) and energy and to...

Plasma etching (or dry etching) is widely used in the fabrication of integrated circuits (IC). Anisotropic features are easily obtained by controlling reactive ion trajectories in plasma. Twisting and bowing are two main issues during high aspect ratio (HAR) feature etching. Twisting is, instead of a feature etching vertically, the feature twists or turns to the side. Mixing damage by ion bomba...

We introduce a novel three-step procedure for precise niobium (Nb)-etching on the nanometer-scale, including the design of high contrast resist patterning and sacrifice layer formation under high radio frequency (RF) power. We present the results of precise slit fabrication using this technique and discuss its application for the production of superconducting devices, such as superconductor-sem...

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) ind...

This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a constant source power level. The rate at whic...