Dry etch plays a very important role in fabrication of modern IIIV compound semiconductor devices. Compared to wet chemical etch, dry etch, which uses reactive gas plasma to remove substances chemically, has many advantages, such as better controllability, higher pattern reproducibility, and lower cost. Dry etch can induce surface damages that will affect physical and electrical properties of d...

OBJECTIVES This study investigated whether increasing the concentration of acidic monomers in one-step adhesives would allow reducing their application time without interfering with the bonding ability to primary enamel and dentin. MATERIAL AND METHODS Experimental one-step self-etch adhesives were formulated with 5 wt% (AD5), 20 wt% (AD20), or 35 wt% (AD35) acidic monomer. The adhesives were...

We report on the effect of ion energy on photoresist etching in an inductively coupled large area plasma source driven by a 13.56 MHz traveling wave with oxygen gas. To control the ion energy at the substrate surface, the electrode on which the substrate is placed is independently driven by a capacitively coupled 1 MHz power source. The etch rate increases with increasing ion energy for gas pre...

Self-etch adhesives that etch, prime, and bond simultaneously should not exhibit incomplete resin infiltration within hybrid layers. We hypothesized that nanoleakage patterns in these systems are artifacts caused by mineral dissolution in mildly acidic silver nitrate. Resin-dentin interfaces bonded with four single-step, self-etch adhesives were examined for nanoleakage by conventional (pH 4.2)...

Background: The newly introduced self-adhering flowable resin-composites decrease the required time for application by incorporation of an acidic adhesive monomer, thus reducing the number of steps, but its bonding is still uncertain. The aim of this study was to evaluate the interfacial microscopic examination and chemical analysis at the resin-dentin interface of a self-adhering flowable resi...

Wet etching of glass by hydrofluoric acid is widely used in microfabrication, but is limited by the isotropic nature of the process that leads to rounded sidewalls and a 90 degrees angle between the etch front and the surface of the substrate. For many applications such as microvalving, or for further processing such as spin-coating, well controlled, gently sloping sidewalls are often preferred...

OBJECTIVE The aim of this study was to compare the shear bond strength of several self-etch adhesives to their two-step predecessors to ground and unground enamel. METHODS Seventy-five extracted, non-carious human third molar teeth were selected for this study. The buccal surfaces of each tooth were mechanically ground to obtain flat enamel surfaces (ground enamel), while the lingual surfaces...

Article history: Received 20 October 2015 Received in revised form 18 December 2015 Accepted 21 December 2015 Available online 22 December 2015 We present a new chlorine-free dry etching process which was used to successfully etch indium antimonide grown on gallium arsenide substrates while keeping the substrate temperature below 150 °C. By use of a reflowed photoresist mask a sidewall with 60 ...

Ion-enhanced dry etch methods inflict "etch process damage" through surface ion bombardment. These inherent limitations in conventional dry etch methods create potential roadblocks to achieving device properties necessary for scaling below 32 nm. We describe an alternative dry etch method in which electrons with energies below about 100 eV stimulate precision etching of features as small as 20 ...