نتایج جستجو برای: electron configuration
تعداد نتایج: 430632 فیلتر نتایج به سال:
Using capacitance transient techniques, a bistable center, here called FB-center, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (Ea = EC − 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the tran...
We extend the scope of full configuration interaction quantum Monte Carlo (FCIQMC) to be applied coupled fermion-boson hamiltonians, alleviating a priori truncation in boson occupation which is necessary for many other wave function based approaches tractable. Detailing required algorithmic changes efficient excitation generation, we apply FCIQMC two contrasting settings. The first sign-problem...
This study aims to produce the Flappy Chem game as a learning media on electron configuration material referring feasibility indicators, namely validity, practicality, and effectiveness of developed media. uses 4D development model. The instrument used is validation sheet, student response questionnaire happiness level pretest, posttest. limited trial was conducted at SMA Negeri 3 Sidoarjo with...
We consider a modified Schrödinger equation wherein the electron-electron repulsion terms r(ij)(-1) are approximated by truncated one-particle resolutions. Numerical results for the He atom and H2 molecule at the Hartree-Fock, second-order Møller-Plesset, and configuration interaction levels show that the solutions of the resulting reduced-rank Schrödinger equations converge rapidly, and that e...
Dielectronic recombination (DR) of Na-like Fe forming Mg-like Fe via excitation of a 2l core electron has been investigated. We find that configuration interaction (CI) between DR resonances with different captured electron principal quantum numbers n can lead to a significant reduction in resonance strengths for n ≥ 5. Including this form of CI accounts for most of the discrepancy between prev...
We study the electrical transport properties of well-contacted ballistic single-walled carbon nanotubes in a three-terminal configuration at low temperatures. We observe signatures of strong electron-electron interactions: the conductance exhibits bias-voltage-dependent amplitudes of quantum interference oscillation, and both the current noise and Fano factor manifest bias-voltage-dependent pow...
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