نتایج جستجو برای: dual material gate

تعداد نتایج: 556549  

Journal: :Journal of the Korean Institute of Electrical and Electronic Material Engineers 2005

Journal: :Advanced Materials Interfaces 2022

Organic electrochemical transistors (OECTs) based on Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) are a benchmark system in organic bioelectronics. In particular, the superior mechanical properties and ionic-electronic transduction yield excellent potential for field of implantable or wearable sensing technology. However, depletion-mode operation PEDOT:PSS-based OECT...

2006
M. Karner S. Holzer M. Vasicek W. Goes M. Wagner H. Kosina S. Selberherr

Numerous technological innovations, including material and process changes such as high–k gate dielectrics and metal gate electrodes, are investigated to meet the upcoming scaling requirements while keeping the gate leakage current within tolerable limits [1]. To overcome the technological problems, further theoretical and experimental research is needed which requires an extensive use of compu...

2000
Wen-Chin Lee Jakub Kedzierski Hideki Takeuchi Kazuya Asano Charles Kuo Erik Anderson Tsu-Jae King Jeffrey Bokor Chenming Hu

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily usi...

Journal: :IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing 2000

2002
M. M. A. Hakim

We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface. Self-consistent numerical results reveal that accounting for wave function penetration into the gate dielectric causes the carrier distribution to be shifted closer to the gate dielectric. This effect incr...

2005
M. Niwa R. Mitsuhashi K. Yamamoto S. Hayashi Y. Harada A. Rothchild T. Hoffmann S. Kubicek S. De Gendt M. Heyns S. Biesemans M. Kubota

1. Introduction In spite of intensive efforts, still some serious items to be solved remain for high-k gate stack. By narrowing down the items, gate electrode has become one of the most problematic issues due to unavoidable Fermi level pinning [1]. In this talk, after a brief benchmarking of high-k gate stack technology, we lay particular stress on the impact on the electrical characteristics c...

Journal: :Proceedings of the National Academy of Sciences 2010

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