نتایج جستجو برای: double gate
تعداد نتایج: 282107 فیلتر نتایج به سال:
A double gate FinFET can reduce drain induced barrier lowering and improve threshold (short channel effects). In this paper, a very important geometrical parameter, that is, the fin width of a FinFET has been analyzed. In this article, a double gate n channel FinFET with a gate length of 20nm has been reported. The transfer characteristics of the FinFET at various fin widths have been obtained ...
High electron mobility transistors (HEMTs) based on III–V semiconductor materials have been investigated as these devices are scaled down to gate lengths of 120, 90, 70, 50 and 30 nm. A standard Monte Carlo (MC) method coupled with the solution of Poisson’s equation is employed to simulate a particle transport. The average particle velocity and the field–momentum relaxation time are studied in ...
Blm10 is bound to the yeast proteasome core particle, a crucial protease of eukaryotic cells [corrected]. Two gates, at both ends of the CP, control the access of protein substrates to the catalytic cavity of the CP. Normally, substrate access is auto-inhibited by a closed gate conformation unless regulatory complexes are bound to the CP and translocate protein substrates in an ATP-dependent ma...
We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...
The bulk MOSFET scaling has recently encountered significant limitations, mainly related to the gate oxide (SiO2) leakage currents (Gusev et al., 2006; Taur et al., 1997), the large increase of parasitic short channel effects and the dramatic mobility reduction (Fischetti & Laux, 2001) due to highly doped Silicon substrates precisely used to reduce these short channel effects. Technological sol...
The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50 nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area. In this paper, a low overlap capacitance, surround gate, vertical MOSFET technology is presented. A new process that uses spacer or fillet local oxidation is develope...
We report the first realization of a biomolecular AND gate function with double-sigmoid response (sigmoid in both inputs). Two enzyme biomarker inputs activate the gate output signal, which can then be used as indicating liver injury, but only when both of these inputs have elevated pathophysiological concentrations, effectively corresponding to logic-1 of the binary gate functioning. At lower,...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید