نتایج جستجو برای: distribution of dislocations

تعداد نتایج: 21195351  

2013
Hongye Gao Ken-ichi Ikeda Tatsuya Morikawa Kenji Higashida Hideharu Nakashima

The microstructures of ¡-Mg, long-period stacking ordered (LPSO) phases, and kink bands in a Mg­Y­Zn alloy were observed by transmission electron microscopy (TEM). The results showed that extruded Mg97Zn1Y2 alloy included different kinds of phases: 2H-Mg, 2H-Mg with many stacking faults, 14H and 18R. Kink bands tended to occur in areas where there were many intermetallic compounds. The element ...

2014
Timothy Lording Sébastien Lustig Elvire Servien Philippe Neyret

OBJECTIVE Patellofemoral instability is common and affects a predominantly young age group. Chondral injury occurs in up to 95%, and includes osteochondral fractures and loose bodies acutely and secondary degenerative changes in recurrent cases. Biomechanical abnormalities, such as trochlear dysplasia, patella alta, and increased tibial tuberosity-trochlear groove distance, predispose to both r...

2010
Sarunas Tarasevicius Mantas Busevicius Otto Robertsson Hans Wingstrand

BACKGROUND Hip dislocation after arthroplasty for femoral neck fractures remains a serious complication. The aim of our study was to investigate the dislocation rate in acute femoral neck fracture patients operated with a posterior approach with cemented conventional or dual articulation acetabular components. METHODS We compared the dislocation rate in 56 consecutive patients operated with c...

1996
Patrick J. McNally P. A. F. Herbert J. A. Higgins

A synchrotron x-ray topography analysis of the impact of the distribution of defects/dislocations on the electrical performance of GaAs power varactor diodes was carried out. Diodes fabricated on or near Liquid Encapsulated Czochralski cellular dislocation networks in the substrate, which are also known to be rich in As precipitates near these cell walls, were observed to have reduced breakdown...

1999
H. T. Lin

The distribution of dislocations and domains found in thin ZnSe films grown by molecular-beam epitaxy on GaAs(100) has been examined with low-temperature cathodoluminescence (CL) imaging and spectroscopy. Dark-line and bright-line defects in the low-temperature CL imaging of the free-exciton (FE) and Y-band emissions, respectively, are found to correlate with the presence of [ 1 iO]-oriented mi...

2002
J. Jasinski Z. Liliental-Weber

Hydride vapor phase epitaxy (HVPE) GaN layers on sapphire substrates and so-called free-standing platelets (layers removed from the sapphire) were studied by different transmission electron microscopy (TEM) techniques. Polarity determined by convergent beam electron diffraction (CBED) and distribution of structural defects, determined by conventional TEM, are discussed. HVPE layers were found t...

2010
Jeroen de Haan Niels Schep Wim Tuinebreijer Dennis den Hartog

OBJECTIVE The primary objective of this review of the literature with quantitative analysis of individual patient data was to identify the results of available treatments for complex elbow dislocations and unstable simple elbow dislocations. The secondary objective was to compare the results of patients with complex elbow dislocations and unstable elbow joints after repositioning of simple elbo...

2010
S. I. Maximenko J. A. Freitas R. L. Myers-Ward K.-K. Lew B. L. VanMil C. R. Eddy D. K. Gaskill P. G. Muzykov T. S. Sudarshan

Local recombination properties of threading screw and edge dislocations in 4H–SiC epitaxial layers have been studied using electron beam induced current !EBIC". The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw dislocations had a more pronounced impact on diffusion length than the edge dislocations, evidencing stronger recombina...

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