In this paper, a method is proposed for extraction of coupled networks from layout information for simulation of electrothermal device behavior. The networks represent a threedimensional (3-D) device structure with circuit elements. The electrical and thermal characteristics of this circuit representation are calculated with a circuit simulator. Spatial potential distributions, current flows, a...

A behavioral model in PSpice for a silicon carbide (SiC) power MOSFET rated at 1200V / 33A for a wide temperature range is developed by extracting the device parameters from the data sheet. The static and dynamic behavior of the SiC power MOSFET is simulated and compared with the device characteristics to validate the accuracy of the PSpice model. The temperature dependent behavior of the MOSFE...

In this paper, we apply our proposed computing algorithm for numerical solution of semiconductor device energy balance equation in carrier temperature simulation. This robust simulation based on finite volume discertization scheme and monotone iterative algorithm is successfully developed and implemented for intrinsic investigation of submicron MOSFET device. Simulation results demonstrate MOSF...

Temperature-responsive luminescent solar concentrators (LSCs) have been fabricated in which the Förster resonance energy transfer (FRET) between a donor-acceptor pair in a liquid crystalline solvent can be tuned. At room temperatures, the perylene bisimide (PBI) acceptor is aggregated and FRET is inactive; while after heating to a temperature above the isotropic phase of the liquid crystal solv...

We present the design of an ultra-low power, wireless pressure/temperature sensing device for continuous intraocular pressure monitoring. The device is wirelessly powered and demonstrates a power consumption of 2.3 W at 1.5 V during continuous monitoring. The chip converts both capacitance and temperature to frequency using a time-interleaved relaxation oscillator, which modulates RF backscatte...

This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...

We have studied experimentally the effect of ambient temperature on performance of the surface-passivated Al0.2Ga0.8N/GaN heterostructure field-effect transistors in the temperature range from 25°C to 250°C. The measured data have been compared with physics-based modeling of the GaN transistor characteristics under different ambient temperatures. The experimental data, showing about 33% degrada...

Threshold voltage shifts associated with negative gate bias temperature instability in p-channel power VDMOSFETs under the static and pulsed stress conditions are analysed in terms of the effects on device lifetime. The pulsed bias stressing is found to cause less significant threshold voltage shifts in comparison with those caused by the static stressing, which is ascribed to the effects of dy...

This paper describes the thermal management and design challenges of testing packaged integrated circuit (IC) devices, specifically device thermal conditioning and device-under-test (DUT) temperature control. The approach taken is to discuss the individual thermal design issues as defined by the device type (e.g. memory, microcontroller) and tester capabilities. The influence of performance-par...

This work builds on the previous introduction [1] of a coupled experimental-computational system devised to fully characterize the thermal behavior of complex 3D submicron electronic devices. The new system replaces the laser-based surface temperature scanning approach with a CCD camera-based approach. As before, the thermo-reflectance thermography system is used to noninvasively measure with s...