A 48 mm cutoff wavelength (lc) Si far-infrared ~FIR! detector is demonstrated. Internal photoemission over a Si interfacial work-function of a homojunction consisting of molecular beam epitaxy grown multilayers (p emitter layers and intrinsic layers! is employed. The detector shows high responsivity over a wide wavelength range with a peak responsivity of 12.360.1 A/W at 27.5 mm and detectivity...

A bolometer thermometer with a thermal capacity C is coupled to a temperature T. 0 through a heat conductivity G and receives the power.Bolometers made with a square mesh structure can be assembled. Show a wide feature of noise not explained by the basic theory. A bolometer is a device for measuring the power of incident electromagnetic radiation via the heating of a material with a temperature...

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; t...

We have developed novel single-photon detectors in the 10-50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the conductance of a capacitively-coupled channel located underneath (lower QW). The excellent noise eq...

Printed organic photodetectors can transform plastic, paper or glass into smart surfaces. This innovative technology is now growing exponentially due to the strong demand in human-machine interfaces. To date, only niche markets are targeted since organic sensors still present reduced performances in comparison with their inorganic counterparts. Here we demonstrate that it is possible to enginee...

As a typical three-dimensional Dirac semimetal (3D DSM), Cd 3 2 possess ultrahigh carrier mobility, high level of full spectral absorption, fast electron transmission speed, and photocurrent response, which enable wide applications in infrared photodetector. However, the large dark current detector based on thin film limits application small response. Hence, we demonstrated heterojunction photo...

This work evaluated the resistance switching characteristics in the (100)-oriented Pb(Zn1/3Nb2/3)0.91Ti0.09O₃ (PZNT) single crystal. The current hysteresis can be closely related to the ferroelectric polarization and we provided a possible explanation using a model about oxygen vacancies to analyze the mechanism of switching. The obvious frequency dispersion of the relative permittivity signifi...

Centrifugal casting of composites and ceramics has been widely employed to improve the mechanical and thermal properties of functional materials. This powerful method has yet to be deployed in the context of nanoparticles--yet size-effect tuning of quantum dots is among their most distinctive and application-relevant features. Here we report the first gradient nanoparticle films to be construct...

Transparent ultraviolet (UV) ZnO thin film photoconductors are expected to have great applications in environmental monitoring, large-area displays, and optical communications, and they have drawn enormous interests in recent years. However, at present their performances are not satisfactory: the responsivity R (a parameter characterizing the sensitivity of the device to light) is not high (<1....

An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5–5 mm mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III–V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an i...