نتایج جستجو برای: depth profiling
تعداد نتایج: 242779 فیلتر نتایج به سال:
Rigorous approaches to study electro-chemo-mechanical processes at the analytically challenging buried interfaces in solid-state batteries are discussed. Furthermore, new experiments evidence potential misinterpretations depth-profiling studies.
Current proteomics technologies allow substantial depth of analysis of cellular and subcellular proteomes as shown in the proteomic profiling of ovarian cancer cells. This in-depth analysis has elucidated the repertoire of proteins expressed on the cell surface and proteins released into the extracellular milieu, uncovering extensive shedding of extracellular domains of cell adhesion proteins a...
بیماری های زیادی در دنیا، بسته به شرایط اقلیمی گیاه کلزا را مورد تهدید قرار می دهد و باعث وارد آمدن خسارت اقتصادی به آن می گردد. موثرترین روش برای کنترل بیماری، اصلاح برای مقاومت می-باشد، به طوریکه توارث ژنتیکی کافی موجود باشد. بنابراین، بررسی تنوع ژنتیکی ژرم پلاسم موجود، یکی از روش های مناسب مدیریت منابع ژنتیکی می باشد. روشnbs profiling موتیف های محافطت شده در دمین های عملکردی خانواده ژنی را م...
In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluat...
Achieving information content of satisfactory breadth and depth remains a formidable challenge for proteomics. This problem is particularly relevant to the study of primary human specimens, such as tumor biopsies, which are heterogeneous and of finite quantity. Here we present a functional proteomics strategy that unites the activity-based protein profiling and multidimensional protein identifi...
The availability of two-dimensional (2-D) dopant profiling techniques to Silicon Carbide (SiC) pn junction is discussed. We compared the results of scanning capacitance microscopy (SCM), scanning spreading resistance microscopy (SSRM), and secondary electron microscopy (SEM), where the cross-sections of a SiC wafer with n-type epi-layers and highly-doped p and n regions were used. The SSRM curr...
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