N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at 800 C for 5 minutes in ambient of O2 with pressure of 10 Torr. X-ray diffraction shows that the homobuffer layer is beneficial to the crystalline of N-doped ZnO thi...

In this research work, the production of undoped and silver (Ag) doped zinc oxide (ZnO) thin films for food packaging applications was developed. The main goal was to determine the influence of coatings morphology and thickness on the antimicrobial performance of the produced samples. The ZnO based thin films were deposited on PET (Polyethylene terephthalate) by means of DC reactive magnetron s...

Background: New treatment modali es are developed with the aim of escala ng tumor absorbed dose and simultaneously sparing the normal structures. The use of nanotechnology in cancer treatment offers some possibili es including destroying cancer tumors with minimal damage to healthy ssues. Zinc Oxide nanopar cles (ZnO NPs) are wide band gap semiconductors and seem to have a good effect on increa...

We report ferromagnetism in carbon-doped ZnO. Our first-principles calculations based on density functional theory predicted a magnetic moment of 2.02 mu(B) per carbon when carbon substitutes oxygen in ZnO, and an ferromagnetic coupling among magnetic moments of the carbon dopants. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed-laser deposition sh...

We demonstrate current self-complianced and self-rectifying bipolar resistive switching in an Ag-electroded Na-doped ZnO nanowire device. The resistive switching is controlled by the formation and rupture of an Ag nanoisland chain on the surface along the Na-doped ZnO nanowire. Na-doping plays important roles in both the self-compliance and self-rectifying properties.

Metal-doped ZnO [MZO] thin films show changes of the following properties by a dopant. First, group III element (Al, In, Ga)-doped ZnO thin films have a high conductivity having an n-type semiconductor characteristic. Second, group I element (Li, Na, K)-doped ZnO thin films have high resistivity due to a dopant that accepts a carrier. The metal-doped ZnO (M = Li, Ag) films were prepared by radi...

The influence of the grain boundary (GB) specific area s GB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area s GB is the main factor controlling such...

Polarized x-ray absorption ne structure (XAFS) measurements at the La and Sr sites in La 2?x Sr x CuO 4 (0:075 < x < 0:35) indicate that doped holes introduced with Sr are not uniformly distributed in the CuO 2 planes but reside in impurity states with the majority of charge located on CuO 6 octahedra coupled to the Sr dopants by an apical oxygen (denoted as Sr octahedra). A model based on dope...

It was recently demonstrated that the anisotropic phonon heat transport behavior is a good probe of the stripe formation in La(2-x)Sr(x)CuO(4) (LSCO) [Phys. Rev. B 67, 104503 (2003)]]. Using this probe, we examined an electron-doped cuprate Pr(1.3-x)La(0.7)Ce(x)CuO(4) (PLCCO) and found that essentially the same features as those in LSCO are observed. Moreover, the in-plane resistivity rho(ab) o...

Boron-doped zinc oxide sheet-spheres were synthesized on PET-ITO flexible substrates using a hydrothermal method at 90 °C for 5 h. The results of X-ray diffraction and X-ray photoelectron spectroscopy indicated that the B atoms were successfully doped into the ZnO lattice, the incorporation of B led to an increase in the lattice constant of ZnO and a change in its internal stress. The growth me...