نتایج جستجو برای: conduction band nonparabolicity

تعداد نتایج: 169137  

2015
M. Failla M. Myronov C. Morrison D. R. Leadley

In this Supplementary Information document we provide: a description of the spectral resolution and detector response deconvolution of the THz-TDS data; layer-by-layer sample details; a summary of the cyclotron resonance of the substrates at elevated temperatures; a description of the time-domain model used, and the equivalence between quantum and classical pictures; and a description of the in...

2012
Gregory Stewart

Vanadium oxide (V2O5) is a material that can be fabricated as a thin film of only a few atomic layers thick during mechanical exfoliation due to the weak interlayer interactions, much like how graphene is created. During this project we looked at the band structure of both the bulk and mono-layered V2O5. We used computer software called ABINIT, which is installed on the high performance compute...

The output of a piezoelectric nanogenerator based on ZnO nanowire is largely affected by the shape of nanowire. In order to obtain mechanically stable nanogenerator with high performance, the investigation of mechanical and electrical characteristics related to the nanowires and materials used in nanogenerators are of great interest and significance. This paper presents the various behavior of ...

2013
I Goldfarb D A A Ohlberg J P Strachan M D Pickett J Joshua Yang G Medeiros-Ribeiro R S Williams

We measured valence band offsets in Ta2O5–WO3, Ta2O5–Nb2O5 and WO3–Nb2O5 heterostructure couples by in situ x-ray photoelectron spectroscopy, immediately following the bi-layer growth in ultra-high vacuum. Conduction band offsets were estimated using the measured valence band offsets in conjunction with the literature values for the respective band gaps. The offsets between Ta2O5 and WO3 and be...

2011
Michele Esposto Sriram Krishnamoorthy Digbijoy N. Nath Sanyam Bajaj Ting-Hsiang Hung Siddharth Rajan

We report on our investigation of the electrical properties of metal/Al2O3/GaN metal-insulatorsemiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al2O3 films on GaN substrates. The conduction band offset at the Al2O3/GaN interface was calculated...

The output of a piezoelectric nanogenerator based on ZnO nanowire is largely affected by the shape of nanowire. In order to obtain mechanically stable nanogenerator with high performance, the investigation of mechanical and electrical characteristics related to the nanowires and materials used in nanogenerators are of great interest and significance. This paper presents the various behavior of ...

Journal: :Physical review applied 2022

We report on the direct current (dc) current-voltage ($I$-$V$) characteristics of few-layer muscovite mica (MuM) flakes exfoliated and transferred onto $\mathrm{Si}\mathrm{O}$${}_{2}$/$\mathrm{Si}$ substrate, under different substrate dc bias voltages. Contrary to usual observations in conventional two-dimensional systems, we observe an increase in-plane electrical conductivity with a reducing ...

2009
Ryan M Young Graham B Griffin Oli T Ehrler Aster Kammrath Arthur E Bragg Jan R R Verlet Ori Cheshnovsky Daniel M Neumark

We have examined size-dependent electronic relaxation dynamics in isolated semiconducting mercury cluster anions using time-resolved photoelectron imaging. Relaxation following excitation from within the conduction (p-) band occurs on an ∼3–40 ps timescale and is attributed to non-adiabatic relaxation through the p-band. Exciting an electron from the valence (s-) band into the conduction band c...

2014
Nima Alidoust Maytal Caspary Toroker Emily A. Carter

We use two different ab initio quantum mechanics methods, complete active space self-consistent field theory applied to electrostatically embedded clusters and periodic many-body G0W0 calculations, to reanalyze the states formed in nickel(II) oxide upon electron addition and ionization. In agreement with interpretations of earlier measurements, we find that the valence and conduction band edges...

Journal: :ACS nano 2010
Feng Chen Edwin B Ramayya Chanan Euaruksakul Franz J Himpsel George K Celler Bingjun Ding Irena Knezevic Max G Lagally

We report direct measurements of changes in the conduction-band structure of ultrathin silicon nanomembranes with quantum confinement. Confinement lifts the 6-fold-degeneracy of the bulk-silicon conduction-band minimum (CBM), Delta, and two inequivalent sub-band ladders, Delta(2) and Delta(4), form. We show that even very small surface roughness smears the nominally steplike features in the den...

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