Two notions of process have been used in programs that reason about change* discrete models, which represent changes as instantaneous, and continuous models, which represent changes as processes that act gradually over time. We describe a technique called aggregation which unifies the two types of models and allows both to be used when performing qualitative simulation. Aggregation is a techniq...

We present an approach for extracting thermal coefficients of higher order for different materials. Based on inverse modeling and using transient electrothermal simulations thermal investigations of complex layered polycrystalline silicon (Polysilicon) fuses are performed by a three dimensional interconnect simulator. This method is well suited to optimize different material compositions and ge...

We take a look at a model of computer aided generation of Hindustani Classical music. The system implemented using the model is essentially a simulation of the ‘Arohana’ and ‘Avarohana’ of a particular ‘Raga’. The artificial generator creates note sequences using hand-crafted bigram finite state models which conform to the grammar of a Raga. We also describe a procedure that intends to measure ...

This paper presents an approach to real-time simulation of crowd dynamics on GPU enabled computing architectures. We discuss challenges with parallelization of agent-based models, implementing parallel simulation algorithms, visualization and interaction with the simulated scene and, most importantly, ensuring communication and synchronization between all these processes. Our main objective is ...

This paper presents a methodology for deriving the system graph of a 3D mechanism from CAD models. That is, a linear graph that captures the energy flow in a system. This work is part of a larger research effort in composable simulation. In composable simulation, CAD models of system components are augmented with simulation models describing the component’s dynamic behavior in different energy ...

Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of selfheating, impact ionization, SiN surface effects, and material compositio...