نتایج جستجو برای: cntfet modelling
تعداد نتایج: 162484 فیلتر نتایج به سال:
In recent years, requirements in terms of service-life of civil engineering structures have become more and more stringent, so that the focus of designers and owners is now set on structural durability. Foreseeing structural failures and repairing damaged structures at an early stage has become a major stake. This approach calls for an accurate knowledge of the state of the structure at any poi...
A Verilog-A compact model for Carbon NanoTube Field Effect Transistors (CNTFETs) has been implemented to study basic digital circuits. The model, based on the hypothesis of fully ballistic transport in a mesoscopic system between two non-reflective contacts, has been structured to allow an easy implementation in Verilog-A language and has been compared with experimental data, showing a good agr...
در این مقاله، به ارائه یک ضربکننده آنالوگ چهار ربعی مد جریان جدید برپایه ترانزیستور های نانو لوله کربنی میپردازیم. مدارهای مجذورکننده جریان که اخیرا طراحیشده است و آینه جریان، که در ولتاژ تغذیه پایین (1V) کار میکنند، اجزای اساسی در تحقق معادلات ریاضی هستند. در این پژوهش مدار ضربکننده، با استفاده از فناوری CNTFET ،32 نانو متر طراحی میشود و برای معتبر ساختن عملکرد مدار، ضربکننده ارائهشد...
Electronic detection of biomolecules has been attracting much interest in the fi elds of clinical diagnosis, pharmacy and biotechnology. In particular, developing highly sensitive, label-free, cost-effective, simple and disposable sensors is strongly required for home medical care. Carbon nanotube fi eld-effect transistors (CNTFETs) with singlewall carbon nanotube (SWNT) conducting channels are...
In this paper we implement a simple DC model for CNTFETs already proposed by us in order to carry out static analysis of basic digital circuits. To verify the validity of the obtained results, they are compared with those of Wong model, resulting in good agreement, but obtaining a lighter ensuring compile and shorter execution time, which are the main character...
In this paper we propose a simulation study to carry out dynamic analysis of CNTFET-based digital circuit, introducing in the semi-empirical compact model for CNTFETs, already proposed by us, both the quantum capacitance effects and the sub-threshold currents. To verify the validity of the obtained results, a comparison with Wong model was carried out. Our mode...
This paper presents arithmetic operations, including addition and multiplication, in the ternary Galois field through carbon nanotube field-effect transistors (CNTFETs). Ternary logics have received considerable attention among all the multiple-valued logics. Multiple-valued logics are an alternative to common-practice binary logic, which mostly has been expanded from ternary (three-valued) log...
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