Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2 exhibits long retention over 10 years, high endurance 1012 cycles, speed sub-ns polarization switching, and remnant of 10-30 {\mu}C/cm2. However, the performance Fe-FE...

A TADF emitter exhibiting high OLED device performance of 25% and narrow emission (FWHM = 58 nm) in the deep blue region ( ? em 458 nm, CIE 0.14, 0.13) due to balanced charge transfer interactions locked molecular geometry.

the storage capacity of hydrogen on na-decorated born nitride nanotubes (bnnts) is investigated by using density functional theory within quantum espresso and gaussian 09. the results obtained predict that a single na atom tends to occupy above the central region of the hexagonal rings in (5,0) and (3,3) bnnt structures with a binding energy of -2.67 and -4.28 ev/na-atom respectively. when a si...

zirconium dioxide, commonly known as zirconia, is an interesting material and is receiving growing attention due to its excellent mechanical properties. the solid was characterized for surface area measurements, scanningelectron microscopy (sem), energy dispersive x-ray diffractometry (edx) and potentiometric titrations. surface titrations were carried out at the temperature range 303 to 323k i...