1. Introduction Recent researches from the demands of large size liquid crystal flat panel displays, low cost process and higher performance arouse great interest on amorphous oxide semiconductor based thin-film transistors (TFTs) as an alternative of a-Si TFTs. To achieve device reliability and stability under various current/voltage bias, temperature, and light injections, various researches ...

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson’s equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage rolloff is very important short channel effects(SCEs) for nano structures since it determines turn on/off...

An analytical 2D model of subthreshold current (I DSsub), subthreshold swing (S sub), and threshold voltage (V TH) roll-off with a variation of channel doping concentration (N A) for symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the channel potential is obtained by solving the 2D Poisson's equation with the help of the evanesce...

This paper analyzes in detail the Fringing Induced Barrier Lowering (FIBL) in MOS transistors with high-K gate dielectrics using two-dimensional device simulations. We found that the device short channel performance is degraded with increase in gate dielectric permittivity(Kgate) due to an increase in the dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we obse...

733 Abstract— This paper has studied subthreshold characteristics for double gate(DG) MOSFET using Gaussian function in solving Poisson's equation. Typical two dimensional analytical transport models have been presented for symmetrical Double Gate MOSFETs (DGMOSFETs). Subthreshold swing and threshold voltage are very important factors for digital devices because of determination of ON and OFF. ...

Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called ...

Squeeze cementing is a process used to repair leaking oil and gas wells, in which cement slurry driven under pressure fill an uneven leakage channel. This results Hele-Shaw type flow problem involving yield stress fluid. We solve the using augmented Lagrangian approach advect forward fluid concentrations until stops. A planar invasion radial (perforation hole) are studied. The characteristics o...

in this paper, least square method (lsm) and differential transformation method (dtm) are used to solve the problem of laminar nanofluid flow in a semi-porous channel in the presence of transverse magnetic field. due to existence some shortcomings in each method, a novel and efficient method named ls-dtm is introduced which omitted those defects and has an excellent agreement with numerical sol...

The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that permanent and recoverable defects are generated simultaneously during NBTI stress Ge-OI lower confirmed pMOSFETs with a thinner channel, due to reduction band bending Ev under fixed electrical field stress. Thus, scaling cou...