The potential impact of GaN-based high electron mobility transistor (HEMT) with two channel layers of GaN/InAlGaN is reported. Using two-dimensional and two-carrier device simulations, we investigate the device performance focusing on the electrical potential, electron concentration, breakdown voltage and transconductance (gm). Also, the results have been compared with structure of AlGaN/GaN HE...

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standar...

Fluctuations in the processing parameters can lead to a separation between the gate and the sourceldrain extensions in MOSFETs. A O.lpm MOSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than ...

The insulating performance of oil is vulnerable to particles especially the conductive particles. This paper investigated the influence of copper particles of micrometer size on the breakdown strength and frequency-dependent properties of vegetable oil. The AC breakdown voltage of contaminated vegetable oil with copper particles of different numbers (ranging from 103 to 106) was measured. The f...

Many electrochemical energy-conversion systems are evaluated by polarization curves, which report the cell voltage across a range of current densities and global measure operation state health. Mathematical models can be used to deconstruct measured overall identify quantify voltage-loss sources, such as kinetic, ohmic, mass-transport effects. These results elucidate best pathways for improved ...

link.springer.com/chapter/10.1007%2F978-3-642-37949-9_28#page-1 1/4 Look Inside Get Access Find out how to access preview-only content Quality, Reliability, Security and Robustness in Heterogeneous Networks Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering Volume 115, 2013, pp 325-332 6H-SiC Based Power VJFET and Its Temperature Dependen...

for a better worldTM In the early 1990’s a new failure mode for high current, high voltage semiconductor devices was discovered. The failure mode was of considerable practical significance and caused a series of equipment malfunctions in the field. This failure mode affects all kind of devices like diodes, thyristors, GTOs, IGCTs, IGBTs, etc. It consists of a localised breakdown in the bulk of ...

The recurrence theory for the breakdown probability in avalanche photodiodes (APDs) is generalized to heterostructure APDs that may have multiple multiplication layers. The generalization addresses layer-boundary effects such as the initial energy of injected carriers as well as the layer-dependent profile of the dead space in the multiplication region. Reducing the width of the multiplication ...