نتایج جستجو برای: boron nitride fullerene
تعداد نتایج: 33220 فیلتر نتایج به سال:
Hexagonal boron nitride nanosheets (h-BNNs) with rather high specific surface area (SSA) are important two-dimensional layer-structured materials. Here, a solvent-mediated synthesis of h-BNNs revealed a template-free lattice plane control strategy that induced high SSA nanoporous structured h-BNNs with outstanding aerobic oxidative desulfurization performance.
Surface phonon-polariton (SPhP) modes exist under optical excitation of polar materials, and are accessible using scattering type near-field optical microscopy (s-SNOM). Hexagonal boron nitride (hBN) and boron nitride nanotubes (BNNTs) can exhibit such modes under IR excitation, in spectral regions where the permittivity is negative. Herein we present pump-probe continuous wave (CW) sSNOM a nov...
A comparison between experimental and theoretical electron energy loss near edge structure ~ELNES! of B and N K edges in cubic boron nitride is presented. The electron energy loss spectra of cubic boron nitride particles were measured using a scanning transmission electron microscope. The theoretical calculation of the ELNES was performed within the framework of density functional theory includ...
It has been argued that the experimentally observed limitation of heat transport through boron nitride nanotubes is due to intershell scattering rather than to inefficient heat transfer to inner shells. Using an atomistic Green’s function calculation, we present evidence that on the contrary, intershell or any other type of scattering along the nanotubes is not the main limiting mechanism, and ...
Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in ...
The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures o...
In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10...
The phonon dispersion relations of bulk hexagonal boron nitride have been determined from inelastic x-ray scattering measurements and analyzed by ab initio calculations. Experimental data and calculations show an outstanding agreement and reconcile the controversies raised by recent experimental data obtained by electron-energy loss spectroscopy and second-order Raman scattering.
Partially vertical aligned boron nitride nanotubes (BNNTs) on Si substrates are found to be superhydrophobic in contrast to boron nitride (BN) thin films. While the hexagonal-phase BN films are partially wetted by water with advancing contact angle of about 50 degrees , partially vertically aligned BNNTs can achieve superhydrophobic state with advancing water contact angle exceeding 150 degrees...
Molecular mechanics results show that a hexagonal boron nitride (h-BN) membrane can spontaneously assemble on the single-walled boron nitride nanotube (BNNT) in a scroll or helical manner, showing an interesting dependence on h-BN width. The size of BNNTs should meet the required conditions to guarantee self-assembly. Further analyses of energy components and structural geometry show that this ...
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