Titanium matrix composites (TMC) represent a perspective materials category with potential applications in many important fields like aerospace constructions, automotive industry, ship structures, sports and households objects, and others. A titanium matrix composite is constituted of a titanium or titanium alloy – matrix and reinforcements materials, which are usually ceramics in form of parti...

The properties, applications and methods for producing titanium vanadium diborides are considered. These oxygen-free refractory metal-like compounds. As a result, they characterized by high values of thermal electrical conductivity. Their hardness is relatively high. Titanium exhibit significant chemical resistance in aggressive environments. For these reasons, have found application modern tec...

Boron carbide BxC (x=1/6−10) powders were synthesized through a microwave-assisted carbothermic reduction reaction as potential clean energy material. Their crystallographic structures and optical properties characterized. X-ray diffraction electron indicated that the amorphous. Electron energy-loss spectroscopy demonstrated composition of boron carbon was in amorphous materials, their chemical...

A series of boron nitride nanotubes (BNNTs)/ carbide (B4C) composite ceramics were prepared using spark plasma sintering (SPS) technology, which uses B4C powders as the matrix and BNNTs toughening phase. X-ray diffraction (XRD) scanning electron microscope (SEM) then used to characterize ceramic samples. The effects temperature, content, particle size on microstructure mechanical properties inv...

Boron carbide (B4C) is a hard material whose value for extended engineering applications such as body armor; is limited by its brittleness under impact. To improve the ductility while retaining hardness, we used density functional theory to examine modifying B4C ductility through microalloying. We found that replacing the CBC chain in B4C with Si-Si, denoted as (B11Cp)-Si2, dramatically improve...

In this work, the successful heteroepitaxial growth of boron carbide (B x C) on 4HSiC(0001) 4° off substrate using chemical vapor deposition (CVD) is reported. Towards end, a two-step procedure was developed, involving 4H-SiC boridation under BCl 3 precursor at 1200°C, followed by conventional CVD + C H 8 1600°C. Such allowed obtaining reproducibly monocrystalline (0001) oriented films B with s...