Quasi-DC pulsed plasmas are gaining interest for the formation of ultra-shallow junctions (USJ). In this paper, the scaling of plasma doping for USJ is discussed using results from a 2-dimensional model. A pulsed plasma is generated adjacent to the silicon wafer using biases up to 20 kV in pressures of 10s mTorr. The consequences of pulse width, bias voltage waveform, ICP power, and pressure on...

Traditional MEMS filters use a comb drive structure that suffers from the pull-in instability, which places significant limitation on achievable signal-to-noise ratio of sensor. Because output signal capacitive sensor is linearly related to applied voltage, it desirable can withstand large voltages upwards 100 V. However, instability causes high destroy device and trade-off between performance ...

Tetrahedral amorphous carbon (ta-C) films were studied with and without applying fixed pulse bias and frequency at variable pulse widths in double bent Filtered Cathodic Vacuum Arc(FCVA) system. Both from Raman and X-ray photoelectron spectroscopy(XPS) analyses it has been observed that the ratio of sp/sp is maximal at pulse width of 15 μs with fixed pulse bias 3kV and frequency 200 kHz. Increa...