III-nitride micro-emitter array technology was developed in the authors’ laboratory around 1999. Since its inception, much progress has been made by several groups and the technology has led to the invention of several novel devices. This paper provides an overview on recent progress in single-chip ac-micro-size light emitting diodes (μLEDs) that can be plugged directly into standard high ac vo...

5.1. BJT Fundamentals. In this section we discuss the main principles behind the operation of the BJT. The NPN bipolar transistor consists of 2 NP-PN junctions, as depicted in Fig. 5.1.a. The bipolar device is composed of two diodes back to back with different doping profiles; the BJT has 3 terminals labeled as E(Emitter), B(Base) and C(Collector). The emitter is the most doped terminal and emi...

We report the design, fabrication, and characterization of novel, low-cost, and modular miniaturized nanofiber electrospinning sources for the scalable production of non-woven aligned nanofiber mats with low diameter variation. The devices are monolithic arrays of electrospinning emitters made via stereolithography; the emitters are arranged so each element has an independent line of sight to a...

Single molecule localization based super-resolution imaging techniques require repeated localization of many single emitters. We describe a method that uses the maximum likelihood estimator to localize multiple emitters simultaneously within a single, two-dimensional fitting sub-region, yielding an order of magnitude improvement in the tolerance of the analysis routine with regards to the singl...

Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interf...

To prevent the dramatic degradation of the device performance of SiGe power heterojunction bipolar transistors (HBTs) and maintain the power efficiency, emitter-ballast resistors and base-ballast resistors have been employed in high power bipolar transistors. The microwave performance of emitter-ballast and base-ballast HBTs has been compared and discussed empirically in the previous work. Howe...