A fully-integrated Multi-Band PA using 0.25 μm SiGe:C process with an output power of above 25 dBm is presented. The behaviour of the amplifier has been optimized for multi-band operation covering, 2.4 GHz, 3.6 GHz and 5.4 GHz (UWB-WiMAX) frequency bands for higher 1-dB compression point and efficiency. Multi-band operation is achieved using multi-stage topology. Parasitic components of active ...

This paper presents an effective design methodology and flow, which is validated through three mmwave/sub-mm-wave amplifiers: including W-band LNA with NF=7dB, W-band PA with PAE >11% and D-band amplifier with gain>20dB. The CMOS based amplifiers can be integrated with III-V materials to form heterogeneous integration, such as COSMOS, to achieve the best performance for various applications.

We will report on progress in quasi-optical power amplifiers at Caltech since last year’s meeting, where we reported a 5-W, Ka-band grid amplifier with a waveguide mode converter. This year we have developed an indium-phosphide V-band grid amplifier. The amplifier has been tested both as a transmission amplifier with a waveguide mode converter on the input and output side, and as a reflection a...