The cluster-expansion method was used to perform first principles phase diagram calculations for the wurtzite-structure quasibinary systems (SiC)1 X(AlN)X, (SiC)1 X (GaN)X and (SiC)1 X(InN)X; and to model variations of band gaps as functions of bulk compositions and temperature. In SiC-AlN, plane wave pseudopotential formation-energy calculations predict low-energy metastable states with format...

PURPOSE Neoadjuvant chemotherapy (NAC) has been recently used to downstage breast cancer. However, in patients with initial axillary lymph node (ALN) metastasis, ALN dissection regardless of the NAC response remains the standard treatment. The purpose of this study was to identify the feasibility and accuracy of sentinel lymph node biopsy (SLNB) after NAC in patients with ALN metastasis at diag...

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD)...

OBJECTIVE Intracranial stenting for stent-assisted coiling of aneurysms requires adequate follow-up imaging. The aim of this in vitro study was to compare in-stent artificial luminal narrowing on contrast-enhanced MR angiograms (CE-MRA) when applying Neuroform® and Enterprise® stents for stent-assisted coiling. MATERIALS AND METHODS Two intracranial nitinol stents (Enterprise® and Neuroform®)...

RNA interference (RNAi) is a natural mechanism regulating protein expression that is mediated by small interfering RNAs (siRNA). Harnessing RNAi has potential to treat human disease; however, clinical evidence for the effectiveness of this therapeutic approach is lacking. ALN-RSV01 is an siRNA directed against the mRNA of the respiratory syncytial virus (RSV) nucleocapsid (N) protein and has su...

One-dimensional AlN nanowires/tubes were exploited as hydrogen storage media. The adsorption of atomic and molecular hydrogen on AlN nanowires was investigated by using density functional theory computations. Hydrogen atoms prefer to adsorb on top of neighboring threefold-coordinated N and Al atoms in pairs. A hydrogen molecule, however, prefers to adsorb on top of threefold-coordinated Al atom...

AlN/GaN/sapphire heterostructures with AlN gate film thickness of 3–35 nm are characterized using photoreflectivity ~PR! and photoluminescence ~PL! spectroscopy. Under a critical AlN film thickness, the luminescence from the GaN channel layer near the interface proves to be excitonic. No luminescence related to the recombination of the two-dimensional electron gas ~2DEG! is observed, in spite o...

We report on a novel microfabrication method to fabricate aluminum nitride (AlN) piezoelectric microstructures down to 2 microns size by a surface micromachining process. Highly c-axis oriented AlN thin films are deposited between thin Cr electrodes on polysilicon structural layers by rf reactive sputtering. The top Cr layer is used both as a mask to etch the AlN thin films and as an electrode ...

ZnO films were prepared on p-Si (111) substrates by using atomic layer deposition. High-resolution x-ray diffraction (XRD), scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and I-V measurements were carried out to characterize structural, electrical, and optical properties. After introducing a 60-nm-thick AlN buffer layer, the growth direction ...

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(-2) of 2-MeV proton fluences for AlN metal-semiconductor-metal ...