In this paper we present a high frequency noise model for short channel HEMTs. This model takes into account the effect of depletion region that extends into gate to drain spacing. The effect of this high field extension region on the noise performance of three HEMT structures is analytically calculated and compared with measured data.

The GaN material system is modeled and introduced in the two-dimensional device simulation tool MinimosNT. The simulation setup is calibrated against measurement data from AlGaN/GaN HEMTs. Further, the impact of gate field plates on the electric field distribution in the channel for different geometry setups is investigated.

With the development of energy efficiency technologies such as 5G communication and electric vehicles, Si-based GaN microelectronics has entered a stage rapid industrialization. As new generation microwave millimeter wave devices, High Electron Mobility Transistors (HEMTs) show great advantages in frequency, gain, noise performance. continuous advancement material growth technology, epitaxial s...

In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity devices investigated experimentally in detail for first time. Transistors with different conventional planar fabricated using two-step electron beam lithography (EBL). Current-voltage, resistan...

In this study, we investigated the impact of intrinsic output conductance (goi) on short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, attempted to extract values fT using a simplified small-signal model (SSM) HEMTs and derive an analytical formula for terms extrinsic parameters that are related with g...

Ultra-wide bandgap AlGaN has attracted recent attention as a promising channel material for next-generation high electron mobility transistors (HEMTs) RF power due to its critical field, excellent transport properties, and potential operation in extreme environments. However, the effects of temperature on properties are not fully understood. Here, Al 0.62 Ga 0.38 N/Al 0.45 0.55 N HEMTs have bee...

The rapidly increasing power demand, downsizing of electronics and material specific limitation silicon has led to development AlGaN/GaN heterostructures. Commercial GaN devices are best available for radio frequency (RF) high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures promising enhance the limits next generation devices. In this work, we report on study e...